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One-step synthesis of Cu3BiS3 thin films by a dimethyl sulfoxide (DMSO)-based solution coating process for solar cell application 期刊论文
Solar Energy Materials and Solar Cells, 2018, 卷号: 174, 期号: 0, 页码: 593-598
Authors:  Li JJ(李佳佳);  Han XX(韩修训);  Zhao Y(赵雲);  Li J(李健);  Wang M(王敏);  Dong C(董琛);  Han XX(韩修训)
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Cu3bis3  One-step Solution Coating Process  Thin Film Solar Cell  
Facile preparation of Cu3BiS3 nanorods film through a solution dip-coating process 期刊论文
Journal of Materials Science: Materials in Electronics, 2017, 卷号: 28, 期号: 23, 页码: 17772-17777
Authors:  Li JJ(李佳佳);  Han XX(韩修训);  Zhao Y(赵雲);  Li J(李健);  Wang M(王敏);  Dong C(董琛);  Hao, Zhaomin;  Han XX(韩修训)
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Structural, electronic and optical properties of famatinite and enargite Cu3SbS4 under pressure: A theoretical investigation 期刊论文
Physica Status Solidi (b)-basic solid state physics, 2017, 卷号: 254, 期号: 5, 页码: 1600608(1-10)
Authors:  Li J(李健);  Han XX(韩修训);  Li JJ(李佳佳);  Zhao Y(赵雲);  Fan, Changzeng;  Han XX(韩修训)
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Band Gap  Cu3sbs4  First-principles Calculations  High Pressure  Phase Stability  
Theoretical investigation of structural, mechanical and electronic properties of GaAs1-xNx alloys under ambient and high pressure 期刊论文
Physica B: Condensed Matter, 2017, 卷号: 526, 页码: 1-6
Authors:  Li J(李健);  Han XX(韩修训);  Dong C(董琛);  Fan, Changzeng;  Han XX(韩修训)
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First-principles Calculations  Gaas1-xnx Alloys  High Pressure  Dilute Nitrides  n Concentration  Band Gap  
Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes 期刊论文
Physica B: Condensed Matter, 2017, 卷号: 527, 页码: 52-56
Authors:  Dong C(董琛);  Han XX(韩修训);  Li J(李健);  Gao, Xin;  Yoshio Ohshita;  Han XX(韩修训)
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Gaasn  Schottky Barrier Diodes (Sbds)  Growth Orientation  C-v And G/ω-v Characteristics  Interface States  
Impact of the substrate orientation on the N incorporation in GaAsN: Theoretical and experimental investigations 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 687, 页码: 42-46
Authors:  Li J(李健);  Han XX(韩修训);  Dong C(董琛);  Fan ZZ(范长增);  Yoshio Ohshita;  Masafumi Yamaguchi;  Han XX(韩修训)
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Gaasn  First Principle Calculation  n Incorporation  Growth Orientation  Chemical Potentials  
Synthesis of the Cu2ZnSn(S,Se)(4) alloys with tunable phase structure and composition via a novel non-toxic solution method 期刊论文
RSC advances, 2013, 卷号: 3, 期号: 48, 页码: 26160-26165
Authors:  Zhao Y(赵雲);  Han XX(韩修训);  Li W(李文);  Liu L(刘亮);  Tanaka, Tooru;  Han XX(韩修训)
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Effects of a key deep level and interface states on the performance of GaAsN solar cells: a simulation analysis 期刊论文
Semiconductor Science and Technology, 2012, 卷号: 27, 期号: 10, 页码: 105013(1-6)
Authors:  Han, Xiuxun;  Hwang, Jong-Ha;  Kojima, Nobuaki;  Ohshita, Yoshio;  Yamaguchi, Masafumi;  Han XX(韩修训)
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