| Effects of a key deep level and interface states on the performance of GaAsN solar cells: a simulation analysis | |
| Department | 清洁能源化学与材料实验室 |
Han, Xiuxun1,2 ; Hwang, Jong-Ha3; Kojima, Nobuaki3; Ohshita, Yoshio3; Yamaguchi, Masafumi3; Han XX(韩修训)
| |
| The second department | 固体润滑国家重点实验室 |
| 2012 | |
| Source Publication | Semiconductor Science and Technology
 |
| ISSN | 0268-1242 |
| Volume | 27Issue:10Pages:105013(1-6) |
| Abstract | To explore the origin of low conversion efficiency of GaAsN solar cells, the effects from a key deep level (E1) at about 0.3–0.4 eV below the conduction band and interface states between the GaAsN emitter and GaAs front surface field layer were investigated by numerical simulation. Our results show that a high deep level concentration in GaAsN layers and a large interface recombination velocity are necessary to fit the experimental data. Interface recombination plays an important role in reducing the quantum efficiency in the short-wavelength region. Its effect can be weakened by applying a thin emitter and a high doping level in the GaAs surface field layer. The abundant existence of E1 is responsible for the high contribution of Shockley–Read–Hall recombination from the space-charged region. Its density should be reduced to <1015 cm−3 for higher conversion efficiency. |
| Subject Area | 材料科学与物理化学 |
| DOI | 10.1088/0268-1242/27/10/105013 |
| Funding Organization | the ‘Top Hundred Talents Program’ of Chinese Academy of Sciences;the New Energy Development Organization (NEDO)under theministry of Economy, Trade and Industry, Japan |
| Indexed By | SCI |
| If | 1.921 |
| Language | 英语 |
| Funding Project | 光电材料与器件研究组 |
| compositor | 第一作者单位 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.licp.cn/handle/362003/4752 |
| Collection | 清洁能源化学与材料实验室 固体润滑国家重点实验室（LSL） |
| Corresponding Author | Han XX(韩修训) |
| Affiliation | 1.Chinese Acad Sci, Lanzhou Inst Chem Phys, Lab Clean Energy Chem & Mat, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China 3.Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan |
| Recommended Citation GB/T 7714 | Han, Xiuxun,Hwang, Jong-Ha,Kojima, Nobuaki,et al. Effects of a key deep level and interface states on the performance of GaAsN solar cells: a simulation analysis[J]. Semiconductor Science and Technology,2012,27(10):105013(1-6). |
| APA | Han, Xiuxun,Hwang, Jong-Ha,Kojima, Nobuaki,Ohshita, Yoshio,Yamaguchi, Masafumi,&韩修训.(2012).Effects of a key deep level and interface states on the performance of GaAsN solar cells: a simulation analysis.Semiconductor Science and Technology,27(10),105013(1-6). |
| MLA | Han, Xiuxun,et al."Effects of a key deep level and interface states on the performance of GaAsN solar cells: a simulation analysis".Semiconductor Science and Technology 27.10(2012):105013(1-6). |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012_补发论文_韩修训.pdf（827KB） | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | View Application Full Text | |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment