Theoretical investigation of structural, mechanical and electronic properties of GaAs1-xNx alloys under ambient and high pressure | |
Department | 清洁能源化学与材料实验室 |
Li J(李健)1; Han XX(韩修训)1,2; Dong C(董琛)1,3; Fan, Changzeng4; Han XX(韩修训) | |
The second department | 固体润滑国家重点实验室 |
2017 | |
Source Publication | Physica B: Condensed Matter |
ISSN | 0921-4526 |
Volume | 526Pages:1-6 |
Abstract | Using first-principles total energy calculations, we have studied the structural, mechanical and electronic properties of GaAs1-xNx ternary semiconductor alloys with the zinc-blende crystal structure over the whole nitrogen concentration range (with x from 0 to 1) within density functional theory (DFT) framework. To obtain the ideal band gap, we employ the semi-empirical approach called local density approximation plus the multiorbital mean-field Hubbard model (LDA+U). The calculated results illustrate the varying lattice constants and band gap in GaAs1-xNx alloys as functions of the nitrogen concentration x. According to the pressure dependence of the lattice constants and volume, the higher N concentration alloy exhibits the better anti-compressibility. In addition, an increasing band gap is predicted under 20 GPa pressure for GaAs1-xNx alloys. |
Keyword | First-principles Calculations Gaas1-xnx Alloys High Pressure Dilute Nitrides n Concentration Band Gap |
Subject Area | 材料科学与物理化学 |
DOI | 10.1016/j.physb.2017.09.030 |
Funding Organization | the National Natural Science Foundation of China (Grant no. 61376066) |
Indexed By | SCI |
If | 1.386 |
Language | 英语 |
Funding Project | 光电材料与器件研究组 |
compositor | 第一作者单位 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.licp.cn/handle/362003/22761 |
Collection | 清洁能源化学与材料实验室 固体润滑国家重点实验室(LSL) |
Corresponding Author | Han XX(韩修训) |
Affiliation | 1.Chinese Acad Sci, Lanzhou Inst Chem Phys, Lab Clean Energy Chem & Mat, Lanzhou 730000, Gansu, Peoples R China 2.Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Gansu, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100080, Peoples R China 4.Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China |
Recommended Citation GB/T 7714 | Li J,Han XX,Dong C,et al. Theoretical investigation of structural, mechanical and electronic properties of GaAs1-xNx alloys under ambient and high pressure[J]. Physica B: Condensed Matter,2017,526:1-6. |
APA | Li J,Han XX,Dong C,Fan, Changzeng,&韩修训.(2017).Theoretical investigation of structural, mechanical and electronic properties of GaAs1-xNx alloys under ambient and high pressure.Physica B: Condensed Matter,526,1-6. |
MLA | Li J,et al."Theoretical investigation of structural, mechanical and electronic properties of GaAs1-xNx alloys under ambient and high pressure".Physica B: Condensed Matter 526(2017):1-6. |
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