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Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes 期刊论文
Physica B: Condensed Matter, 2017, 卷号: 527, 页码: 52-56
Authors:  Dong C(董琛);  Han XX(韩修训);  Li J(李健);  Gao, Xin;  Yoshio Ohshita;  Han XX(韩修训)
Adobe PDF(862Kb)  |  Favorite  |  View/Download：80/1  |  Submit date：2017/12/18
Gaasn  Schottky Barrier Diodes (Sbds)  Growth Orientation  C-v And G/ω-v Characteristics  Interface States  
Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 657, 页码: 325-329
Authors:  Dong C(董琛);  Han XX(韩修训);  Gao, Xin;  Yoshio Ohshita;  Masafumi Yamaguchi;  Han XX(韩修训)
Adobe PDF(1243Kb)  |  Favorite  |  View/Download：178/2  |  Submit date：2015/12/30
Gaasn  Schottky Diode  Growth Orientation  I-v Characteristics  C-v Characteristics  Electrical Properties  
Tb3＋，Dy3＋激活的LaBO3的发光和能量传递 期刊论文
发光学报, 1995, 卷号: 16, 期号: 1, 页码: 57-62
Authors:  王齐祖;  田军;  杨晓鸿;  高昕
Adobe PDF(308Kb)  |  Favorite  |  View/Download：71/3  |  Submit date：2015/07/09
Labo3：tb．dy  Labo3：tb＋dy  能量传递  Labo3 Tb3++  Dy3++  Energy Transimission