Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates

doi:10.1016/j.jallcom.2015.10.097

LICP OpenIR > 清洁能源化学与材料实验室

	Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates
Department	清洁能源化学与材料实验室
	Dong C(董琛)1,2; Han XX(韩修训)1,3 ; Gao, Xin 4; Yoshio Ohshita 5; Masafumi Yamaguchi 5; Han XX(韩修训)
The second department	固体润滑国家重点实验室
	2016
Source Publication	Journal of Alloys and Compounds
ISSN	0925-8388
Volume	657 Pages:325-329
Abstract	The contact behavior of Cu on n-type GaAsN, grown on (100) and (311) A/B GaAs substrates by chemical beam epitaxy, has been investigated by currentevoltage (I-V) and capacitanceevoltage (C-V) measurements. Both N incorporation and growth orientation are found to influence the electrical properties of Cu/GaAsN Schottky diodes. The increasing N composition leads to an increase in the ideality factor and Schottky barrier height (C-V), whereas a decrease in the carrier concentration in samples with all adopted growth orientations. Compared with (100) and (311)B samples, the Schottky diodes constructed on (311)A GaAsN epilayer exhibit better performance with ideality factor close to 1 and higher barrier height. The interfacial chemical reaction between metal layer and surface atoms on the growth surface is believed to account for the observations.
Keyword	Gaasn Schottky Diode Growth Orientation I-v Characteristics C-v Characteristics Electrical Properties
Subject Area	材料科学与物理化学
DOI	10.1016/j.jallcom.2015.10.097
Funding Organization	the National Natural Science Foundation of China (Grant No. 61376066;11475078);“Top Hundred Talents Program” of Chinese Academy of Sciences;the New Energy Development Organization (NEDO) under the Ministry of Economy, Trade and Industry, Japan
Indexed By	SCI
If	3.133
Language	英语
Funding Project	光电材料与器件研究组
compositor	第一作者单位
Citation statistics	Cited Times:5[WOS] [WOS Record] [Related Records in WOS]
Document Type	期刊论文
Identifier	http://ir.licp.cn/handle/362003/19029
Collection	清洁能源化学与材料实验室固体润滑国家重点实验室（LSL）
Corresponding Author	Han XX(韩修训)
Affiliation	1.Chinese Acad Sci, Lanzhou Inst Chem Phys, Lab Clean Energy Chem & Mat, Lanzhou 730000, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100080, Peoples R China 3.Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China 4.Lanzhou Inst Phys, Sci & Technol Vacuum Technol & Phys Lab, Lanzhou 730000, Peoples R China 5.Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan
Recommended Citation GB/T 7714	Dong C,Han XX,Gao, Xin,et al. Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates[J]. Journal of Alloys and Compounds,2016,657:325-329.
APA	Dong C,Han XX,Gao, Xin,Yoshio Ohshita,Masafumi Yamaguchi,&韩修训.(2016).Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates.Journal of Alloys and Compounds,657,325-329.
MLA	Dong C,et al."Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates".Journal of Alloys and Compounds 657(2016):325-329.

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