Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes | |
Department | 清洁能源化学与材料实验室 |
Dong C(董琛)1,2; Han XX(韩修训)1,3; Li J(李健)1; Gao, Xin4; Yoshio Ohshita5; Han XX(韩修训) | |
The second department | 固体润滑国家重点实验室 |
2017 | |
Source Publication | Physica B: Condensed Matter |
ISSN | 0921-4526 |
Volume | 527Pages:52-56 |
Abstract | The frequency dependent capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics of Schottky barrier diodes (SBDs) with Cu contacts on Si doped GaAsN epilayers with (100) and (311) A/B orientations have been investigated in the frequency range from 20 kHz to 1 MHz at room temperature. C, G/omega and the deduced series resistance (Rs) show strong dependences on the applied frequency in the forward bias region, which is closely correlated to the frequency-dependent response of interface states (Nss). In GaAsN SBDs with all three growth orientations, the increasing N composition is found to increase the peak value of capacitance and enhance its dependence on frequency, which thus implies a general rule that increasing N incorporation causes an increase in Nss. The increasing extent of Nss due to N incorporation, however, differs a lot for different growth orientations as analyzed by using Hill-Coleman method. It is revealed that (311)B is the promising growth orientation to suppress the Nss generation over a wider N composition range in GaAsN Schottky devices. The reduced formation probability of non-substitutional N due to the efficient N incorporation on the (311)B plane is considered to be responsible for the observations. |
Keyword | Gaasn Schottky Barrier Diodes (Sbds) Growth Orientation C-v And G/ω-v Characteristics Interface States |
Subject Area | 材料科学与物理化学 |
DOI | 10.1016/j.physb.2017.09.125 |
Funding Organization | the National Natural Science Foundation of China (Grant nos. 61376066;11475078) |
Indexed By | SCI |
If | 1.405 |
Language | 英语 |
Funding Project | 光电材料与器件研究组 |
compositor | 第一作者单位 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.licp.cn/handle/362003/22747 |
Collection | 清洁能源化学与材料实验室 固体润滑国家重点实验室(LSL) |
Corresponding Author | Han XX(韩修训) |
Affiliation | 1.Chinese Acad Sci, Lab Clean Energy Chem & Mat, Lanzhou Inst Chem Phys, Lanzhou 730000, Gansu, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100080, Peoples R China 3.Chinese Acad Sci, State Key Lab Solid Lubricat, Lanzhou Inst Chem Phys, Lanzhou 730000, Gansu, Peoples R China 4.Lanzhou Inst Phys, Sci & Technol Vacuum Technol & Phys Lab, Lanzhou 730000, Gansu, Peoples R China 5.Toyota Technol Inst, 2-12-1 Hisakata, Nagoya, Aichi 4688511, Japan |
Recommended Citation GB/T 7714 | Dong C,Han XX,Li J,et al. Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes[J]. Physica B: Condensed Matter,2017,527:52-56. |
APA | Dong C,Han XX,Li J,Gao, Xin,Yoshio Ohshita,&韩修训.(2017).Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes.Physica B: Condensed Matter,527,52-56. |
MLA | Dong C,et al."Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes".Physica B: Condensed Matter 527(2017):52-56. |
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