Chinese | English

Search in the results

LICP OpenIR

Browse/Search Results:  1-10 of 10 Help

Filters                            
Selected(0)Clear Items/Page:    Sort:
One-step synthesis of Cu3BiS3 thin films by a dimethyl sulfoxide (DMSO)-based solution coating process for solar cell application 期刊论文
Solar Energy Materials and Solar Cells, 2018, 卷号: 174, 期号: 0, 页码: 593-598
Authors:  Li JJ(李佳佳);  Han XX(韩修训);  Zhao Y(赵雲);  Li J(李健);  Wang M(王敏);  Dong C(董琛);  Han XX(韩修训)
Adobe PDF(1766Kb)  |  Favorite  |  View/Download：230/5  |  Submit date：2017/12/18
Cu3bis3  One-step Solution Coating Process  Thin Film Solar Cell  
Fabrication and enhanced hydrogen evolution reaction performance of a Cu3BiS3 nanorods/TiO2 heterojunction film 期刊论文
New Journal of Chemistry, 2018, 卷号: 42, 期号: 6, 页码: 4114-4120
Authors:  Li JJ(李佳佳);  Han XX(韩修训);  Wang M(王敏);  Zhao Y(赵雲);  Dong C(董琛);  Han XX(韩修训)
Adobe PDF(2707Kb)  |  Favorite  |  View/Download：100/1  |  Submit date：2018/06/05
Facile preparation of Cu3BiS3 nanorods film through a solution dip-coating process 期刊论文
Journal of Materials Science: Materials in Electronics, 2017, 卷号: 28, 期号: 23, 页码: 17772-17777
Authors:  Li JJ(李佳佳);  Han XX(韩修训);  Zhao Y(赵雲);  Li J(李健);  Wang M(王敏);  Dong C(董琛);  Hao, Zhaomin;  Han XX(韩修训)
Adobe PDF(1260Kb)  |  Favorite  |  View/Download：134/2  |  Submit date：2017/12/19
Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes 期刊论文
Physica B: Condensed Matter, 2017, 卷号: 527, 页码: 52-56
Authors:  Dong C(董琛);  Han XX(韩修训);  Li J(李健);  Gao, Xin;  Yoshio Ohshita;  Han XX(韩修训)
Adobe PDF(862Kb)  |  Favorite  |  View/Download：81/1  |  Submit date：2017/12/18
Gaasn  Schottky Barrier Diodes (Sbds)  Growth Orientation  C-v And G/ω-v Characteristics  Interface States  
Impact of the substrate orientation on the N incorporation in GaAsN: Theoretical and experimental investigations 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 687, 页码: 42-46
Authors:  Li J(李健);  Han XX(韩修训);  Dong C(董琛);  Fan ZZ(范长增);  Yoshio Ohshita;  Masafumi Yamaguchi;  Han XX(韩修训)
Adobe PDF(1305Kb)  |  Favorite  |  View/Download：99/1  |  Submit date：2016/10/25
Gaasn  First Principle Calculation  n Incorporation  Growth Orientation  Chemical Potentials  
Pre-annealing induced oxide barrier to suppress the overselenization of Mo contact 期刊论文
Journal of Materials Science: Materials in Electronics, 2016, 卷号: 27, 期号: 11, 页码: 11188-11191
Authors:  Li W(李文);  Han XX(韩修训);  Zhao Y(赵雲);  Yang SR(杨生荣);  Han XX(韩修训);  Yang SR(杨生荣)
Adobe PDF(2562Kb)  |  Favorite  |  View/Download：98/1  |  Submit date：2016/10/25
Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 657, 页码: 325-329
Authors:  Dong C(董琛);  Han XX(韩修训);  Gao, Xin;  Yoshio Ohshita;  Masafumi Yamaguchi;  Han XX(韩修训)
Adobe PDF(1243Kb)  |  Favorite  |  View/Download：179/2  |  Submit date：2015/12/30
Gaasn  Schottky Diode  Growth Orientation  I-v Characteristics  C-v Characteristics  Electrical Properties  
Growth orientation dependence of Si doping in GaAsN 期刊论文
Journal of Applied Physics, 2015, 卷号: 117, 期号: 5, 页码: 055706(1-4)
Authors:  Han XX(韩修训);  Dong C(董琛);  Feng, Qiang;  Ohshita, Yoshio;  Yamaguchi, Masafumi;  Han XX(韩修训)
Adobe PDF(613Kb)  |  Favorite  |  View/Download：107/5  |  Submit date：2015/12/30
Tunable photoluminescence and spectrum split from fluorinated to hydroxylated graphene 期刊论文
Nanoscale, 2014, 卷号: 6, 期号: 6, 页码: 3316-3324
Authors:  Gong PW(公培伟);  Wang JQ(王金清);  Sun WM(孙伟明);  Wu D(吴迪);  Wang ZF(王赵峰);  Fan ZJ(范增杰);  Wang HG(王宏刚);  Han XX(韩修训);  Yang SR(杨生荣);  Wang JQ(王金清)
Adobe PDF(1340Kb)  |  Favorite  |  View/Download：399/5  |  Submit date：2014/12/13
Synthesis of the Cu2ZnSn(S,Se)(4) alloys with tunable phase structure and composition via a novel non-toxic solution method 期刊论文
RSC advances, 2013, 卷号: 3, 期号: 48, 页码: 26160-26165
Authors:  Zhao Y(赵雲);  Han XX(韩修训);  Li W(李文);  Liu L(刘亮);  Tanaka, Tooru;  Han XX(韩修训)
Adobe PDF(776Kb)  |  Favorite  |  View/Download：468/6  |  Submit date：2013/12/12