LICP OpenIR  > 清洁能源化学与材料实验室
Pre-annealing induced oxide barrier to suppress the overselenization of Mo contact
Department清洁能源化学与材料实验室
Li W(李文)1,3; Han XX(韩修训)1,2; Zhao Y(赵雲)1; Yang SR(杨生荣)2; Han XX(韩修训); Yang SR(杨生荣)
The second department固体润滑国家重点实验室
2016
Source PublicationJournal of Materials Science: Materials in Electronics
ISSN0957-4522
Volume27Issue:11Pages:11188-11191
Abstract

Molybdenum (Mo) is commonly used as the back contact material complying well with the formation of an ohmic contact for chalcogenide thin film solar cells. However, the easy formation of an over-thick MoSe2 layer between the Cu2ZnSn(S,Se)4 absorber and Mo back contact significantly deteriorates the device performance. To overcome the degradation, the effects of thermal treatment on Mo layers have been investigated in this paper. It was found that pre-annealing Mo back contacts is effective to control the growth of interfacial MoSe2 layer during selenization. Moreover, the thickness of MoSe2 layer could be conveniently tailored by simply varying the pre-annealing temperature. The work provides direct proof that the appearance of a thin MoO2 layer on the top of annealed Mo film indeed acts as a temporary barrier to block the over-selenization of Mo back contact.

Subject Area材料科学与物理化学
DOI10.1007/s10854-016-5238-2
Funding Organizationthe ‘‘Top Hundred Talents Program’’ of Chinese Academy of Sciences (CAS)
Indexed BySCI
If2.019
Language英语
Funding Project光电材料与器件研究组
compositor第一作者单位
Citation statistics
Cited Times:12[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.licp.cn/handle/362003/20474
Collection清洁能源化学与材料实验室
固体润滑国家重点实验室(LSL)
Corresponding AuthorHan XX(韩修训); Yang SR(杨生荣)
Affiliation1.Laboratory of Clean Energy Chemistry and Materials
2.State Key Laboratory of Solid Lubrication
3.University of Chinese Academy of Sciences
Recommended Citation
GB/T 7714
Li W,Han XX,Zhao Y,et al. Pre-annealing induced oxide barrier to suppress the overselenization of Mo contact[J]. Journal of Materials Science: Materials in Electronics,2016,27(11):11188-11191.
APA Li W,Han XX,Zhao Y,Yang SR,韩修训,&杨生荣.(2016).Pre-annealing induced oxide barrier to suppress the overselenization of Mo contact.Journal of Materials Science: Materials in Electronics,27(11),11188-11191.
MLA Li W,et al."Pre-annealing induced oxide barrier to suppress the overselenization of Mo contact".Journal of Materials Science: Materials in Electronics 27.11(2016):11188-11191.
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