Pre-annealing induced oxide barrier to suppress the overselenization of Mo contact | |
Department | 清洁能源化学与材料实验室 |
Li W(李文)1,3; Han XX(韩修训)1,2; Zhao Y(赵雲)1; Yang SR(杨生荣)2; Han XX(韩修训); Yang SR(杨生荣) | |
The second department | 固体润滑国家重点实验室 |
2016 | |
Source Publication | Journal of Materials Science: Materials in Electronics |
ISSN | 0957-4522 |
Volume | 27Issue:11Pages:11188-11191 |
Abstract | Molybdenum (Mo) is commonly used as the back contact material complying well with the formation of an ohmic contact for chalcogenide thin film solar cells. However, the easy formation of an over-thick MoSe2 layer between the Cu2ZnSn(S,Se)4 absorber and Mo back contact significantly deteriorates the device performance. To overcome the degradation, the effects of thermal treatment on Mo layers have been investigated in this paper. It was found that pre-annealing Mo back contacts is effective to control the growth of interfacial MoSe2 layer during selenization. Moreover, the thickness of MoSe2 layer could be conveniently tailored by simply varying the pre-annealing temperature. The work provides direct proof that the appearance of a thin MoO2 layer on the top of annealed Mo film indeed acts as a temporary barrier to block the over-selenization of Mo back contact. |
Subject Area | 材料科学与物理化学 |
DOI | 10.1007/s10854-016-5238-2 |
Funding Organization | the ‘‘Top Hundred Talents Program’’ of Chinese Academy of Sciences (CAS) |
Indexed By | SCI |
If | 2.019 |
Language | 英语 |
Funding Project | 光电材料与器件研究组 |
compositor | 第一作者单位 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.licp.cn/handle/362003/20474 |
Collection | 清洁能源化学与材料实验室 固体润滑国家重点实验室(LSL) |
Corresponding Author | Han XX(韩修训); Yang SR(杨生荣) |
Affiliation | 1.Laboratory of Clean Energy Chemistry and Materials 2.State Key Laboratory of Solid Lubrication 3.University of Chinese Academy of Sciences |
Recommended Citation GB/T 7714 | Li W,Han XX,Zhao Y,et al. Pre-annealing induced oxide barrier to suppress the overselenization of Mo contact[J]. Journal of Materials Science: Materials in Electronics,2016,27(11):11188-11191. |
APA | Li W,Han XX,Zhao Y,Yang SR,韩修训,&杨生荣.(2016).Pre-annealing induced oxide barrier to suppress the overselenization of Mo contact.Journal of Materials Science: Materials in Electronics,27(11),11188-11191. |
MLA | Li W,et al."Pre-annealing induced oxide barrier to suppress the overselenization of Mo contact".Journal of Materials Science: Materials in Electronics 27.11(2016):11188-11191. |
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Pre-annealing induce(2562KB) | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | View Application Full Text |
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