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Small but strong: The influence of fluorine atoms on formation and performance of graphene quantum dots using a gradient F-sacrifice strategy 期刊论文
Carbon, 2017, 卷号: 112, 页码: 63-71
Authors:  Gong PW(公培伟);  Wang JQ(王金清);  Hou KM(侯凯明);  Yang ZG(杨志刚);  Wang ZF(王赵峰);  Liu, Zhe;  Han XX(韩修训);  Yang SR(杨生荣);  Wang JQ(王金清);  Han XX(韩修训)
Adobe PDF(4132Kb)  |  Favorite  |  View/Download：163/3  |  Submit date：2017/02/20
Theoretical investigation of structural, mechanical and electronic properties of GaAs1-xNx alloys under ambient and high pressure 期刊论文
Physica B: Condensed Matter, 2017, 卷号: 526, 页码: 1-6
Authors:  Li J(李健);  Han XX(韩修训);  Dong C(董琛);  Fan, Changzeng;  Han XX(韩修训)
Adobe PDF(1495Kb)  |  Favorite  |  View/Download：94/2  |  Submit date：2017/12/18
First-principles Calculations  Gaas1-xnx Alloys  High Pressure  Dilute Nitrides  n Concentration  Band Gap  
Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes 期刊论文
Physica B: Condensed Matter, 2017, 卷号: 527, 页码: 52-56
Authors:  Dong C(董琛);  Han XX(韩修训);  Li J(李健);  Gao, Xin;  Yoshio Ohshita;  Han XX(韩修训)
Adobe PDF(862Kb)  |  Favorite  |  View/Download：81/1  |  Submit date：2017/12/18
Gaasn  Schottky Barrier Diodes (Sbds)  Growth Orientation  C-v And G/ω-v Characteristics  Interface States  
Impact of the substrate orientation on the N incorporation in GaAsN: Theoretical and experimental investigations 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 687, 页码: 42-46
Authors:  Li J(李健);  Han XX(韩修训);  Dong C(董琛);  Fan ZZ(范长增);  Yoshio Ohshita;  Masafumi Yamaguchi;  Han XX(韩修训)
Adobe PDF(1305Kb)  |  Favorite  |  View/Download：99/1  |  Submit date：2016/10/25
Gaasn  First Principle Calculation  n Incorporation  Growth Orientation  Chemical Potentials  
Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 657, 页码: 325-329
Authors:  Dong C(董琛);  Han XX(韩修训);  Gao, Xin;  Yoshio Ohshita;  Masafumi Yamaguchi;  Han XX(韩修训)
Adobe PDF(1243Kb)  |  Favorite  |  View/Download：179/2  |  Submit date：2015/12/30
Gaasn  Schottky Diode  Growth Orientation  I-v Characteristics  C-v Characteristics  Electrical Properties  
Growth orientation dependence of Si doping in GaAsN 期刊论文
Journal of Applied Physics, 2015, 卷号: 117, 期号: 5, 页码: 055706(1-4)
Authors:  Han XX(韩修训);  Dong C(董琛);  Feng, Qiang;  Ohshita, Yoshio;  Yamaguchi, Masafumi;  Han XX(韩修训)
Adobe PDF(613Kb)  |  Favorite  |  View/Download：107/5  |  Submit date：2015/12/30
Step-by-step build-up of ordered p-n heterojunctions at nanoscale for efficient light harvesting 期刊论文
RSC Advances, 2013, 卷号: 3, 期号: 1, 页码: 166-171
Authors:  Yan JF(严俊峰);  Ye Q(叶谦);  Han XX(韩修训);  Zhou F(周峰);  Zhou F(周峰)
Adobe PDF(961Kb)  |  Favorite  |  View/Download：433/4  |  Submit date：2013/12/13
Effects of a key deep level and interface states on the performance of GaAsN solar cells: a simulation analysis 期刊论文
Semiconductor Science and Technology, 2012, 卷号: 27, 期号: 10, 页码: 105013(1-6)
Authors:  Han, Xiuxun;  Hwang, Jong-Ha;  Kojima, Nobuaki;  Ohshita, Yoshio;  Yamaguchi, Masafumi;  Han XX(韩修训)
Adobe PDF(827Kb)  |  Favorite  |  View/Download：401/4  |  Submit date：2013/12/17