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One-step synthesis of Cu3BiS3 thin films by a dimethyl sulfoxide (DMSO)-based solution coating process for solar cell application 期刊论文
Solar Energy Materials and Solar Cells, 2018, 卷号: 174, 期号: 0, 页码: 593-598
Authors:  Li JJ(李佳佳);  Han XX(韩修训);  Zhao Y(赵雲);  Li J(李健);  Wang M(王敏);  Dong C(董琛);  Han XX(韩修训)
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Cu3bis3  One-step Solution Coating Process  Thin Film Solar Cell  
Fabrication and enhanced hydrogen evolution reaction performance of a Cu3BiS3 nanorods/TiO2 heterojunction film 期刊论文
New Journal of Chemistry, 2018, 卷号: 42, 期号: 6, 页码: 4114-4120
Authors:  Li JJ(李佳佳);  Han XX(韩修训);  Wang M(王敏);  Zhao Y(赵雲);  Dong C(董琛);  Han XX(韩修训)
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Facile preparation of Cu3BiS3 nanorods film through a solution dip-coating process 期刊论文
Journal of Materials Science: Materials in Electronics, 2017, 卷号: 28, 期号: 23, 页码: 17772-17777
Authors:  Li JJ(李佳佳);  Han XX(韩修训);  Zhao Y(赵雲);  Li J(李健);  Wang M(王敏);  Dong C(董琛);  Hao, Zhaomin;  Han XX(韩修训)
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Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes 期刊论文
Physica B: Condensed Matter, 2017, 卷号: 527, 页码: 52-56
Authors:  Dong C(董琛);  Han XX(韩修训);  Li J(李健);  Gao, Xin;  Yoshio Ohshita;  Han XX(韩修训)
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Gaasn  Schottky Barrier Diodes (Sbds)  Growth Orientation  C-v And G/ω-v Characteristics  Interface States  
Pre-annealing induced oxide barrier to suppress the overselenization of Mo contact 期刊论文
Journal of Materials Science: Materials in Electronics, 2016, 卷号: 27, 期号: 11, 页码: 11188-11191
Authors:  Li W(李文);  Han XX(韩修训);  Zhao Y(赵雲);  Yang SR(杨生荣);  Han XX(韩修训);  Yang SR(杨生荣)
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Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 657, 页码: 325-329
Authors:  Dong C(董琛);  Han XX(韩修训);  Gao, Xin;  Yoshio Ohshita;  Masafumi Yamaguchi;  Han XX(韩修训)
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Gaasn  Schottky Diode  Growth Orientation  I-v Characteristics  C-v Characteristics  Electrical Properties  
Effects of a key deep level and interface states on the performance of GaAsN solar cells: a simulation analysis 期刊论文
Semiconductor Science and Technology, 2012, 卷号: 27, 期号: 10, 页码: 105013(1-6)
Authors:  Han, Xiuxun;  Hwang, Jong-Ha;  Kojima, Nobuaki;  Ohshita, Yoshio;  Yamaguchi, Masafumi;  Han XX(韩修训)
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