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Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes 期刊论文
Physica B: Condensed Matter, 2017, 卷号: 527, 页码: 52-56
Authors:  Dong C(董琛);  Han XX(韩修训);  Li J(李健);  Gao, Xin;  Yoshio Ohshita;  Han XX(韩修训)
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Gaasn  Schottky Barrier Diodes (Sbds)  Growth Orientation  C-v And G/ω-v Characteristics  Interface States  
Photonic crystal structural-induced Cu3SnS4/Ti3+-TiO2 p-n coaxial heterojunction arrays for light-driven H-2 production and pollutant degradation 期刊论文
Materials and Design, 2017, 卷号: 133, 页码: 426-434
Authors:  Li, Yan;  Chang, Yin;  Liu, Fang-Ting;  Zhao Y(赵雲);  Wang, Jian;  Wang, Cheng-Wei
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Cu3sns4  Tio2 Photonic Crystal  P-n Coaxial Heterojunction Arrays  Photocatalytic H2 Production And Pollutant Degradation  
(n11)取向GaAsN外延材料的Si掺杂行为及肖特基接触特性研究 学位论文
, 北京: 中国科学院大学, 2016
Authors:  董琛
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Gaasn  生长取向  外延生长  光电特性  Growth Orientation  Epitaxial Growth  Optoelectronic Characteristics  
Impact of the substrate orientation on the N incorporation in GaAsN: Theoretical and experimental investigations 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 687, 页码: 42-46
Authors:  Li J(李健);  Han XX(韩修训);  Dong C(董琛);  Fan ZZ(范长增);  Yoshio Ohshita;  Masafumi Yamaguchi;  Han XX(韩修训)
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Gaasn  First Principle Calculation  n Incorporation  Growth Orientation  Chemical Potentials  
Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 657, 页码: 325-329
Authors:  Dong C(董琛);  Han XX(韩修训);  Gao, Xin;  Yoshio Ohshita;  Masafumi Yamaguchi;  Han XX(韩修训)
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Gaasn  Schottky Diode  Growth Orientation  I-v Characteristics  C-v Characteristics  Electrical Properties  
Growth orientation dependence of Si doping in GaAsN 期刊论文
Journal of Applied Physics, 2015, 卷号: 117, 期号: 5, 页码: 055706(1-4)
Authors:  Han XX(韩修训);  Dong C(董琛);  Feng, Qiang;  Ohshita, Yoshio;  Yamaguchi, Masafumi;  Han XX(韩修训)
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Effects of a key deep level and interface states on the performance of GaAsN solar cells: a simulation analysis 期刊论文
Semiconductor Science and Technology, 2012, 卷号: 27, 期号: 10, 页码: 105013(1-6)
Authors:  Han, Xiuxun;  Hwang, Jong-Ha;  Kojima, Nobuaki;  Ohshita, Yoshio;  Yamaguchi, Masafumi;  Han XX(韩修训)
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