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中国科学院兰州化学物理研究所机构知识库
KMS Lanzhou Institute of Chemical Physics,Chinese Academy of Sciences
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固体润滑国家重点实验... [9]
清洁能源化学与材料实... [9]
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Community:固体润滑国家重点实验室(LSL)
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Community:清洁能源化学与材料实验室
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Field emission cathode based on three-dimensional framework carbon and its operation under the driving of a triboelectric nanogenerator
期刊论文
Nano Energy, 2018, 卷号: 49, 期号: 0, 页码: 308-315
Authors:
Chen JT(陈江涛)#
;
Yang BJ(杨兵军)#
;
Yu Dian Lim#
;
Su LJ(苏利军)
;
Yang J(杨娟)
;
Guo RS(郭瑞生)
;
Beng Kang Tay
;
Yan XB(阎兴斌)
;
Yan XB(阎兴斌)
Adobe PDF(3131Kb)
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Submit date:2018/05/04
Field Emission
Cold Cathode
Three-dimensional Framework Carbon
Triboelectric Nanogenerator
Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes
期刊论文
Physica B: Condensed Matter, 2017, 卷号: 527, 页码: 52-56
Authors:
Dong C(董琛)
;
Han XX(韩修训)
;
Li J(李健)
;
Gao, Xin
;
Yoshio Ohshita
;
Han XX(韩修训)
Adobe PDF(862Kb)
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View/Download:81/1
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Submit date:2017/12/18
Gaasn
Schottky Barrier Diodes (Sbds)
Growth Orientation
C-v And G/ω-v Characteristics
Interface States
Impact of the substrate orientation on the N incorporation in GaAsN: Theoretical and experimental investigations
期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 687, 页码: 42-46
Authors:
Li J(李健)
;
Han XX(韩修训)
;
Dong C(董琛)
;
Fan ZZ(范长增)
;
Yoshio Ohshita
;
Masafumi Yamaguchi
;
Han XX(韩修训)
Adobe PDF(1305Kb)
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View/Download:98/1
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Submit date:2016/10/25
Gaasn
First Principle Calculation
n Incorporation
Growth Orientation
Chemical Potentials
Enhanced field emission from ZnO nanowire arrays utilizing MgO buffer between seed layer and silicon substrate
期刊论文
Applied Surface Science, 2016, 卷号: 387, 页码: 103-108
Authors:
Chen, Si
;
Chen JT(陈江涛)
;
Liu, Jianlin
;
Qi, Jing
;
Wang, Yuhua
Adobe PDF(2016Kb)
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View/Download:71/0
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Submit date:2016/12/15
Zno Nanowire Arrays
Field Emission
Mgo Buffer Layer
Electron Transport
Vertically Aligned
Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates
期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 657, 页码: 325-329
Authors:
Dong C(董琛)
;
Han XX(韩修训)
;
Gao, Xin
;
Yoshio Ohshita
;
Masafumi Yamaguchi
;
Han XX(韩修训)
Adobe PDF(1243Kb)
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View/Download:179/2
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Submit date:2015/12/30
Gaasn
Schottky Diode
Growth Orientation
I-v Characteristics
C-v Characteristics
Electrical Properties
The effect of high-temperature oxygen annealing on field emission from ZnO nanowire arrays
期刊论文
Applied Surface Science, 2015, 卷号: 357, 页码: 413-416
Authors:
Chen, Si
;
Chen JT(陈江涛)
;
Liu, Jianlin
;
Qi, Jing
;
Wang, Yuhua
Adobe PDF(815Kb)
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View/Download:76/0
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Submit date:2016/01/21
Zno
Nanowire Arrays
Oxygen Annealing
Field Emission
Oxygen Vacancy
Growth orientation dependence of Si doping in GaAsN
期刊论文
Journal of Applied Physics, 2015, 卷号: 117, 期号: 5, 页码: 055706(1-4)
Authors:
Han XX(韩修训)
;
Dong C(董琛)
;
Feng, Qiang
;
Ohshita, Yoshio
;
Yamaguchi, Masafumi
;
Han XX(韩修训)
Adobe PDF(613Kb)
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Submit date:2015/12/30
Morphology and crystallinity-controlled synthesis of MnO2 hierarchical nanostructures and their application in lithium ion batteries
期刊论文
CrystEngComm, 2014, 卷号: 16, 期号: 45, 页码: 10476-10484
Authors:
Sun DF(孙东飞)
;
Chen JT(陈江涛)
;
Yang J(杨娟)
;
Yan XB(阎兴斌)
;
Yan XB(阎兴斌)
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Submit date:2015/02/05
Effects of a key deep level and interface states on the performance of GaAsN solar cells: a simulation analysis
期刊论文
Semiconductor Science and Technology, 2012, 卷号: 27, 期号: 10, 页码: 105013(1-6)
Authors:
Han, Xiuxun
;
Hwang, Jong-Ha
;
Kojima, Nobuaki
;
Ohshita, Yoshio
;
Yamaguchi, Masafumi
;
Han XX(韩修训)
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Submit date:2013/12/17