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Formation energies of substitutional N-As and split interstitial complexes in dilute GaAsN alloys with different growth orientations 期刊论文
Applied Physics A-MATERIALS SCIENCE & PROCESSING, 2018, 卷号: 124, 期号: 2, 页码: 108(1-5)
Authors:  Li J(李健);  Han XX(韩修训);  Dong C(董琛);  Fan, Changzeng;  Han XX(韩修训)
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Theoretical investigation of structural, mechanical and electronic properties of GaAs1-xNx alloys under ambient and high pressure 期刊论文
Physica B: Condensed Matter, 2017, 卷号: 526, 页码: 1-6
Authors:  Li J(李健);  Han XX(韩修训);  Dong C(董琛);  Fan, Changzeng;  Han XX(韩修训)
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First-principles Calculations  Gaas1-xnx Alloys  High Pressure  Dilute Nitrides  n Concentration  Band Gap  
Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes 期刊论文
Physica B: Condensed Matter, 2017, 卷号: 527, 页码: 52-56
Authors:  Dong C(董琛);  Han XX(韩修训);  Li J(李健);  Gao, Xin;  Yoshio Ohshita;  Han XX(韩修训)
Adobe PDF(862Kb)  |  Favorite  |  View/Download:81/1  |  Submit date:2017/12/18
Gaasn  Schottky Barrier Diodes (Sbds)  Growth Orientation  C-v And G/ω-v Characteristics  Interface States  
Enhancing Open-Circuit Voltage of Solution-Processed Cu2ZnSn(S,Se)(4) Solar Cells With Ag Substitution 期刊论文
IEEE Journal of Photovoltaics, 2017, 卷号: 7, 期号: 3, 页码: 874-881
Authors:  Zhao Y(赵雲);  Han XX(韩修训);  Xu, Bin;  Li W(李文);  Li J(李健);  Li JJ(李佳佳);  Wang M(王敏);  Dong C(董琛);  Ju P(鞠鹏);  Li, Junshuai
Adobe PDF(1124Kb)  |  Favorite  |  View/Download:130/1  |  Submit date:2017/08/28
Ag Substitution  Open-circuit Voltage  Cu2znsn(s  Thin Film Solar Cells  Se)(4) (cztsSe)  
(n11)取向GaAsN外延材料的Si掺杂行为及肖特基接触特性研究 学位论文
, 北京: 中国科学院大学, 2016
Authors:  董琛
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Gaasn  生长取向  外延生长  光电特性  Growth Orientation  Epitaxial Growth  Optoelectronic Characteristics  
Impact of the substrate orientation on the N incorporation in GaAsN: Theoretical and experimental investigations 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 687, 页码: 42-46
Authors:  Li J(李健);  Han XX(韩修训);  Dong C(董琛);  Fan ZZ(范长增);  Yoshio Ohshita;  Masafumi Yamaguchi;  Han XX(韩修训)
Adobe PDF(1305Kb)  |  Favorite  |  View/Download:98/1  |  Submit date:2016/10/25
Gaasn  First Principle Calculation  n Incorporation  Growth Orientation  Chemical Potentials  
In situ synthesis of oriented NiS nanotube arrays on FTO as high-performance counter electrode for dye-sensitized solar cells 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 679, 页码: 384-390
Authors:  Li, Yan;  Chang, Yin;  Zhao Y(赵雲);  Wang, Jian;  Wang, Cheng-wei
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Oriented Nis Nanotube Arrays  In-situ Synthesis  Counter Electrode  Dye-sensitized Solar Cell  
Growth orientation dependence of Si doping in GaAsN 期刊论文
Journal of Applied Physics, 2015, 卷号: 117, 期号: 5, 页码: 055706(1-4)
Authors:  Han XX(韩修训);  Dong C(董琛);  Feng, Qiang;  Ohshita, Yoshio;  Yamaguchi, Masafumi;  Han XX(韩修训)
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Synthesis of the Cu2ZnSn(S,Se)(4) alloys with tunable phase structure and composition via a novel non-toxic solution method 期刊论文
RSC advances, 2013, 卷号: 3, 期号: 48, 页码: 26160-26165
Authors:  Zhao Y(赵雲);  Han XX(韩修训);  Li W(李文);  Liu L(刘亮);  Tanaka, Tooru;  Han XX(韩修训)
Adobe PDF(776Kb)  |  Favorite  |  View/Download:468/6  |  Submit date:2013/12/12