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Optimization of DMSO-based precursor solution by H2O additive for performance enhancement of kesterite photovoltaic devices 期刊论文
Solar Energy Materials and Solar Cells, 2018, 卷号: 179, 期号: 0, 页码: 427-434
Authors:  Zhao Y(赵雲);  Han XX(韩修训);  Chang, Le;  Li JJ(李佳佳);  Dong C(董琛);  Fang, Yi;  Li, Junshuai;  Han XX(韩修训)
Adobe PDF(2209Kb)  |  Favorite  |  View/Download：104/1  |  Submit date：2018/06/05
Thin Film Solar Cells  Dmso-based Solution Method  H2o Additive  Cu2znsn(s  Se)(4)  
Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes 期刊论文
Physica B: Condensed Matter, 2017, 卷号: 527, 页码: 52-56
Authors:  Dong C(董琛);  Han XX(韩修训);  Li J(李健);  Gao, Xin;  Yoshio Ohshita;  Han XX(韩修训)
Adobe PDF(862Kb)  |  Favorite  |  View/Download：81/1  |  Submit date：2017/12/18
Gaasn  Schottky Barrier Diodes (Sbds)  Growth Orientation  C-v And G/ω-v Characteristics  Interface States  
Facile Synthesis of MoS2/g-C3N4/GO Ternary Heterojunction with Enhanced Photocatalytic Activity for Water Splitting 期刊论文
ACS Sustainable Chemistry & Engineering, 2017, 卷号: 5, 期号: 9, 页码: 7878-7886
Authors:  Wang M(王敏);  Ju P(鞠鹏);  Li JJ(李佳佳);  Zhao Y(赵雲);  Han XX(韩修训);  Hao, Zhaomin;  Han XX(韩修训)
Adobe PDF(5722Kb)  |  Favorite  |  View/Download：160/4  |  Submit date：2017/11/24
Mos2  C3n4  Go  Heterojunction  Water Splitting  
(n11)取向GaAsN外延材料的Si掺杂行为及肖特基接触特性研究 学位论文
, 北京: 中国科学院大学, 2016
Authors:  董琛
Adobe PDF(4849Kb)  |  Favorite  |  View/Download：141/0  |  Submit date：2016/11/24
Gaasn  生长取向  外延生长  光电特性  Growth Orientation  Epitaxial Growth  Optoelectronic Characteristics  
Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 657, 页码: 325-329
Authors:  Dong C(董琛);  Han XX(韩修训);  Gao, Xin;  Yoshio Ohshita;  Masafumi Yamaguchi;  Han XX(韩修训)
Adobe PDF(1243Kb)  |  Favorite  |  View/Download：179/2  |  Submit date：2015/12/30
Gaasn  Schottky Diode  Growth Orientation  I-v Characteristics  C-v Characteristics  Electrical Properties  
Effects of a key deep level and interface states on the performance of GaAsN solar cells: a simulation analysis 期刊论文
Semiconductor Science and Technology, 2012, 卷号: 27, 期号: 10, 页码: 105013(1-6)
Authors:  Han, Xiuxun;  Hwang, Jong-Ha;  Kojima, Nobuaki;  Ohshita, Yoshio;  Yamaguchi, Masafumi;  Han XX(韩修训)
Adobe PDF(827Kb)  |  Favorite  |  View/Download：401/4  |  Submit date：2013/12/17