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One-step synthesis of Cu3BiS3 thin films by a dimethyl sulfoxide (DMSO)-based solution coating process for solar cell application 期刊论文
Solar Energy Materials and Solar Cells, 2018, 卷号: 174, 期号: 0, 页码: 593-598
Authors:  Li JJ(李佳佳);  Han XX(韩修训);  Zhao Y(赵雲);  Li J(李健);  Wang M(王敏);  Dong C(董琛);  Han XX(韩修训)
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Cu3bis3  One-step Solution Coating Process  Thin Film Solar Cell  
Small but strong: The influence of fluorine atoms on formation and performance of graphene quantum dots using a gradient F-sacrifice strategy 期刊论文
Carbon, 2017, 卷号: 112, 页码: 63-71
Authors:  Gong PW(公培伟);  Wang JQ(王金清);  Hou KM(侯凯明);  Yang ZG(杨志刚);  Wang ZF(王赵峰);  Liu, Zhe;  Han XX(韩修训);  Yang SR(杨生荣);  Wang JQ(王金清);  Han XX(韩修训)
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Facile preparation of Cu3BiS3 nanorods film through a solution dip-coating process 期刊论文
Journal of Materials Science: Materials in Electronics, 2017, 卷号: 28, 期号: 23, 页码: 17772-17777
Authors:  Li JJ(李佳佳);  Han XX(韩修训);  Zhao Y(赵雲);  Li J(李健);  Wang M(王敏);  Dong C(董琛);  Hao, Zhaomin;  Han XX(韩修训)
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Structural, electronic and optical properties of famatinite and enargite Cu3SbS4 under pressure: A theoretical investigation 期刊论文
Physica Status Solidi (b)-basic solid state physics, 2017, 卷号: 254, 期号: 5, 页码: 1600608(1-10)
Authors:  Li J(李健);  Han XX(韩修训);  Li JJ(李佳佳);  Zhao Y(赵雲);  Fan, Changzeng;  Han XX(韩修训)
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Band Gap  Cu3sbs4  First-principles Calculations  High Pressure  Phase Stability  
Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes 期刊论文
Physica B: Condensed Matter, 2017, 卷号: 527, 页码: 52-56
Authors:  Dong C(董琛);  Han XX(韩修训);  Li J(李健);  Gao, Xin;  Yoshio Ohshita;  Han XX(韩修训)
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Gaasn  Schottky Barrier Diodes (Sbds)  Growth Orientation  C-v And G/ω-v Characteristics  Interface States  
Impact of the substrate orientation on the N incorporation in GaAsN: Theoretical and experimental investigations 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 687, 页码: 42-46
Authors:  Li J(李健);  Han XX(韩修训);  Dong C(董琛);  Fan ZZ(范长增);  Yoshio Ohshita;  Masafumi Yamaguchi;  Han XX(韩修训)
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Gaasn  First Principle Calculation  n Incorporation  Growth Orientation  Chemical Potentials  
Pre-annealing induced oxide barrier to suppress the overselenization of Mo contact 期刊论文
Journal of Materials Science: Materials in Electronics, 2016, 卷号: 27, 期号: 11, 页码: 11188-11191
Authors:  Li W(李文);  Han XX(韩修训);  Zhao Y(赵雲);  Yang SR(杨生荣);  Han XX(韩修训);  Yang SR(杨生荣)
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Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 657, 页码: 325-329
Authors:  Dong C(董琛);  Han XX(韩修训);  Gao, Xin;  Yoshio Ohshita;  Masafumi Yamaguchi;  Han XX(韩修训)
Adobe PDF(1243Kb)  |  Favorite  |  View/Download：179/2  |  Submit date：2015/12/30
Gaasn  Schottky Diode  Growth Orientation  I-v Characteristics  C-v Characteristics  Electrical Properties  
Mild solvothermal synthesis of Cu2ZnSn(SxSe1-x)(4) nanocrystals with tunable phase structure and composition 期刊论文
Journal of Power Sources, 2015, 卷号: 294, 页码: 603-608
Authors:  Li W(李文);  Han XX(韩修训);  Zhao Y(赵雲);  Gu YE(顾永娥);  Yang SR(杨生荣);  Tanaka, Tooru;  Han XX(韩修训);  Yang SR(杨生荣)
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Cu2znsn(Sxse1-x)(4)  Wurtzite  Zinc Blende  Photoresponse  
Growth orientation dependence of Si doping in GaAsN 期刊论文
Journal of Applied Physics, 2015, 卷号: 117, 期号: 5, 页码: 055706(1-4)
Authors:  Han XX(韩修训);  Dong C(董琛);  Feng, Qiang;  Ohshita, Yoshio;  Yamaguchi, Masafumi;  Han XX(韩修训)
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