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Formation energies of substitutional N-As and split interstitial complexes in dilute GaAsN alloys with different growth orientations 期刊论文
Applied Physics A-MATERIALS SCIENCE & PROCESSING, 2018, 卷号: 124, 期号: 2, 页码: 108(1-5)
Authors:  Li J(李健);  Han XX(韩修训);  Dong C(董琛);  Fan, Changzeng;  Han XX(韩修训)
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Optimization of DMSO-based precursor solution by H2O additive for performance enhancement of kesterite photovoltaic devices 期刊论文
Solar Energy Materials and Solar Cells, 2018, 卷号: 179, 期号: 0, 页码: 427-434
Authors:  Zhao Y(赵雲);  Han XX(韩修训);  Chang, Le;  Li JJ(李佳佳);  Dong C(董琛);  Fang, Yi;  Li, Junshuai;  Han XX(韩修训)
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Thin Film Solar Cells  Dmso-based Solution Method  H2o Additive  Cu2znsn(s  Se)(4)  
One-step synthesis of Cu3BiS3 thin films by a dimethyl sulfoxide (DMSO)-based solution coating process for solar cell application 期刊论文
Solar Energy Materials and Solar Cells, 2018, 卷号: 174, 期号: 0, 页码: 593-598
Authors:  Li JJ(李佳佳);  Han XX(韩修训);  Zhao Y(赵雲);  Li J(李健);  Wang M(王敏);  Dong C(董琛);  Han XX(韩修训)
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Cu3bis3  One-step Solution Coating Process  Thin Film Solar Cell  
Theoretical investigation of structural, mechanical and electronic properties of GaAs1-xNx alloys under ambient and high pressure 期刊论文
Physica B: Condensed Matter, 2017, 卷号: 526, 页码: 1-6
Authors:  Li J(李健);  Han XX(韩修训);  Dong C(董琛);  Fan, Changzeng;  Han XX(韩修训)
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First-principles Calculations  Gaas1-xnx Alloys  High Pressure  Dilute Nitrides  n Concentration  Band Gap  
Enhancing Open-Circuit Voltage of Solution-Processed Cu2ZnSn(S,Se)(4) Solar Cells With Ag Substitution 期刊论文
IEEE Journal of Photovoltaics, 2017, 卷号: 7, 期号: 3, 页码: 874-881
Authors:  Zhao Y(赵雲);  Han XX(韩修训);  Xu, Bin;  Li W(李文);  Li J(李健);  Li JJ(李佳佳);  Wang M(王敏);  Dong C(董琛);  Ju P(鞠鹏);  Li, Junshuai
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Ag Substitution  Open-circuit Voltage  Cu2znsn(s  Thin Film Solar Cells  Se)(4) (cztsSe)  
Impact of the substrate orientation on the N incorporation in GaAsN: Theoretical and experimental investigations 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 687, 页码: 42-46
Authors:  Li J(李健);  Han XX(韩修训);  Dong C(董琛);  Fan ZZ(范长增);  Yoshio Ohshita;  Masafumi Yamaguchi;  Han XX(韩修训)
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Gaasn  First Principle Calculation  n Incorporation  Growth Orientation  Chemical Potentials  
Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 657, 页码: 325-329
Authors:  Dong C(董琛);  Han XX(韩修训);  Gao, Xin;  Yoshio Ohshita;  Masafumi Yamaguchi;  Han XX(韩修训)
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Gaasn  Schottky Diode  Growth Orientation  I-v Characteristics  C-v Characteristics  Electrical Properties  
Growth orientation dependence of Si doping in GaAsN 期刊论文
Journal of Applied Physics, 2015, 卷号: 117, 期号: 5, 页码: 055706(1-4)
Authors:  Han XX(韩修训);  Dong C(董琛);  Feng, Qiang;  Ohshita, Yoshio;  Yamaguchi, Masafumi;  Han XX(韩修训)
Adobe PDF(613Kb)  |  Favorite  |  View/Download：107/5  |  Submit date：2015/12/30
Effects of a key deep level and interface states on the performance of GaAsN solar cells: a simulation analysis 期刊论文
Semiconductor Science and Technology, 2012, 卷号: 27, 期号: 10, 页码: 105013(1-6)
Authors:  Han, Xiuxun;  Hwang, Jong-Ha;  Kojima, Nobuaki;  Ohshita, Yoshio;  Yamaguchi, Masafumi;  Han XX(韩修训)
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