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Formation energies of substitutional N-As and split interstitial complexes in dilute GaAsN alloys with different growth orientations 期刊论文
Applied Physics A-MATERIALS SCIENCE & PROCESSING, 2018, 卷号: 124, 期号: 2, 页码: 108(1-5)
Authors:  Li J(李健);  Han XX(韩修训);  Dong C(董琛);  Fan, Changzeng;  Han XX(韩修训)
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One-step synthesis of Cu3BiS3 thin films by a dimethyl sulfoxide (DMSO)-based solution coating process for solar cell application 期刊论文
Solar Energy Materials and Solar Cells, 2018, 卷号: 174, 期号: 0, 页码: 593-598
Authors:  Li JJ(李佳佳);  Han XX(韩修训);  Zhao Y(赵雲);  Li J(李健);  Wang M(王敏);  Dong C(董琛);  Han XX(韩修训)
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Cu3bis3  One-step Solution Coating Process  Thin Film Solar Cell  
一种银掺杂铜锌锡硫硒光吸收层薄膜材料及其在太阳能电池中的应用 专利
专利类型: 发明, 专利号: 201610950422.4, 申请日期: 2017-12-22, 公开日期: 2017-01-04
Inventors:  韩修训;  赵雲;  李文;  李健
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Facile preparation of Cu3BiS3 nanorods film through a solution dip-coating process 期刊论文
Journal of Materials Science: Materials in Electronics, 2017, 卷号: 28, 期号: 23, 页码: 17772-17777
Authors:  Li JJ(李佳佳);  Han XX(韩修训);  Zhao Y(赵雲);  Li J(李健);  Wang M(王敏);  Dong C(董琛);  Hao, Zhaomin;  Han XX(韩修训)
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Structural, electronic and optical properties of famatinite and enargite Cu3SbS4 under pressure: A theoretical investigation 期刊论文
Physica Status Solidi (b)-basic solid state physics, 2017, 卷号: 254, 期号: 5, 页码: 1600608(1-10)
Authors:  Li J(李健);  Han XX(韩修训);  Li JJ(李佳佳);  Zhao Y(赵雲);  Fan, Changzeng;  Han XX(韩修训)
Adobe PDF(2669Kb)  |  Favorite  |  View/Download：102/1  |  Submit date：2017/07/10
Band Gap  Cu3sbs4  First-principles Calculations  High Pressure  Phase Stability  
Theoretical investigation of structural, mechanical and electronic properties of GaAs1-xNx alloys under ambient and high pressure 期刊论文
Physica B: Condensed Matter, 2017, 卷号: 526, 页码: 1-6
Authors:  Li J(李健);  Han XX(韩修训);  Dong C(董琛);  Fan, Changzeng;  Han XX(韩修训)
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First-principles Calculations  Gaas1-xnx Alloys  High Pressure  Dilute Nitrides  n Concentration  Band Gap  
Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes 期刊论文
Physica B: Condensed Matter, 2017, 卷号: 527, 页码: 52-56
Authors:  Dong C(董琛);  Han XX(韩修训);  Li J(李健);  Gao, Xin;  Yoshio Ohshita;  Han XX(韩修训)
Adobe PDF(862Kb)  |  Favorite  |  View/Download：79/1  |  Submit date：2017/12/18
Gaasn  Schottky Barrier Diodes (Sbds)  Growth Orientation  C-v And G/ω-v Characteristics  Interface States  
Enhancing Open-Circuit Voltage of Solution-Processed Cu2ZnSn(S,Se)(4) Solar Cells With Ag Substitution 期刊论文
IEEE Journal of Photovoltaics, 2017, 卷号: 7, 期号: 3, 页码: 874-881
Authors:  Zhao Y(赵雲);  Han XX(韩修训);  Xu, Bin;  Li W(李文);  Li J(李健);  Li JJ(李佳佳);  Wang M(王敏);  Dong C(董琛);  Ju P(鞠鹏);  Li, Junshuai
Adobe PDF(1124Kb)  |  Favorite  |  View/Download：129/1  |  Submit date：2017/08/28
Ag Substitution  Open-circuit Voltage  Cu2znsn(s  Thin Film Solar Cells  Se)(4) (cztsSe)  
Impact of the substrate orientation on the N incorporation in GaAsN: Theoretical and experimental investigations 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 687, 页码: 42-46
Authors:  Li J(李健);  Han XX(韩修训);  Dong C(董琛);  Fan ZZ(范长增);  Yoshio Ohshita;  Masafumi Yamaguchi;  Han XX(韩修训)
Adobe PDF(1305Kb)  |  Favorite  |  View/Download：97/1  |  Submit date：2016/10/25
Gaasn  First Principle Calculation  n Incorporation  Growth Orientation  Chemical Potentials