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一种银掺杂铜锌锡硫硒光吸收层薄膜材料及其在太阳能电池中的应用 专利
专利类型: 发明, 专利号: 201610950422.4, 申请日期: 2017-12-22, 公开日期: 2017-01-04
Inventors:  韩修训;  赵雲;  李文;  李健
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一种利用溶胶凝胶法制备硫族化合物薄膜的方法 专利
专利类型: 发明, 专利号: 201310605709.X, 申请日期: 2017-01-04, 公开日期: 2015-06-03
Inventors:  韩修训;  赵雲;  李文;  刘亮
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Ag2S nanoparticle-decorated MoS2 for enhanced electrocatalytic and photoelectrocatalytic activity in water splitting 期刊论文
Dalton Transactions, 2017, 卷号: 46, 期号: 2, 页码: 483-490
Authors:  Wang M(王敏);  Ju P(鞠鹏);  Li W(李文);  Zhao Y(赵雲);  Han XX(韩修训);  Han XX(韩修训)
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Small but strong: The influence of fluorine atoms on formation and performance of graphene quantum dots using a gradient F-sacrifice strategy 期刊论文
Carbon, 2017, 卷号: 112, 页码: 63-71
Authors:  Gong PW(公培伟);  Wang JQ(王金清);  Hou KM(侯凯明);  Yang ZG(杨志刚);  Wang ZF(王赵峰);  Liu, Zhe;  Han XX(韩修训);  Yang SR(杨生荣);  Wang JQ(王金清);  Han XX(韩修训)
Adobe PDF(4132Kb)  |  Favorite  |  View/Download:161/3  |  Submit date:2017/02/20
Facile preparation of Cu3BiS3 nanorods film through a solution dip-coating process 期刊论文
Journal of Materials Science: Materials in Electronics, 2017, 卷号: 28, 期号: 23, 页码: 17772-17777
Authors:  Li JJ(李佳佳);  Han XX(韩修训);  Zhao Y(赵雲);  Li J(李健);  Wang M(王敏);  Dong C(董琛);  Hao, Zhaomin;  Han XX(韩修训)
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Structural, electronic and optical properties of famatinite and enargite Cu3SbS4 under pressure: A theoretical investigation 期刊论文
Physica Status Solidi (b)-basic solid state physics, 2017, 卷号: 254, 期号: 5, 页码: 1600608(1-10)
Authors:  Li J(李健);  Han XX(韩修训);  Li JJ(李佳佳);  Zhao Y(赵雲);  Fan, Changzeng;  Han XX(韩修训)
Adobe PDF(2669Kb)  |  Favorite  |  View/Download:102/1  |  Submit date:2017/07/10
Band Gap  Cu3sbs4  First-principles Calculations  High Pressure  Phase Stability  
Direct solution coating of pure-phase Cu2SnS3 thin films without sulfurization 期刊论文
Journal of Materials Science: Materials in Electronics, 2017, 卷号: 28, 期号: 4, 页码: 3481-3486
Authors:  Xu, Bin;  Zhao Y(赵雲);  Sun, Aimin;  Li, Yan;  Li W(李文);  Han XX(韩修训);  Han XX(韩修训)
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Theoretical investigation of structural, mechanical and electronic properties of GaAs1-xNx alloys under ambient and high pressure 期刊论文
Physica B: Condensed Matter, 2017, 卷号: 526, 页码: 1-6
Authors:  Li J(李健);  Han XX(韩修训);  Dong C(董琛);  Fan, Changzeng;  Han XX(韩修训)
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First-principles Calculations  Gaas1-xnx Alloys  High Pressure  Dilute Nitrides  n Concentration  Band Gap  
Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes 期刊论文
Physica B: Condensed Matter, 2017, 卷号: 527, 页码: 52-56
Authors:  Dong C(董琛);  Han XX(韩修训);  Li J(李健);  Gao, Xin;  Yoshio Ohshita;  Han XX(韩修训)
Adobe PDF(862Kb)  |  Favorite  |  View/Download:81/1  |  Submit date:2017/12/18
Gaasn  Schottky Barrier Diodes (Sbds)  Growth Orientation  C-v And G/ω-v Characteristics  Interface States  
Facile Synthesis of MoS2/g-C3N4/GO Ternary Heterojunction with Enhanced Photocatalytic Activity for Water Splitting 期刊论文
ACS Sustainable Chemistry & Engineering, 2017, 卷号: 5, 期号: 9, 页码: 7878-7886
Authors:  Wang M(王敏);  Ju P(鞠鹏);  Li JJ(李佳佳);  Zhao Y(赵雲);  Han XX(韩修训);  Hao, Zhaomin;  Han XX(韩修训)
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Mos2  C3n4  Go  Heterojunction  Water Splitting