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硫化物半导体敏化TiO2纳米棒阵列薄膜的结构、光电性能及机理研究 学位论文
, 北京: 中国科学院大学, 2017
Authors:  韩敏敏
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硫化物半导体  量子点  纳米结构  太阳能电池  光电性能  Sulfide Semiconductors  Quantum Dots  Nanostructures  Solar Cells  Photoelectrochemical Property  
铁电体钙钛矿-TiO2和金属硫化物-TiO2复合材料的设计、制备及光电性能研究 学位论文
, 北京: 中国科学院大学, 2017
Authors:  于丽敏
Adobe PDF(8732Kb)  |  Favorite  |  View/Download：346/0  |  Submit date：2017/12/07
铁电体钙钛矿  硫化物量子点  带隙调节  光电性能  Ferroelectric Perovskite  Inorganic Metal Sulfides  Bandgap Engineering  Photoelectric Properties  
Theoretical investigation of structural, mechanical and electronic properties of GaAs1-xNx alloys under ambient and high pressure 期刊论文
Physica B: Condensed Matter, 2017, 卷号: 526, 页码: 1-6
Authors:  Li J(李健);  Han XX(韩修训);  Dong C(董琛);  Fan, Changzeng;  Han XX(韩修训)
Adobe PDF(1495Kb)  |  Favorite  |  View/Download：93/2  |  Submit date：2017/12/18
First-principles Calculations  Gaas1-xnx Alloys  High Pressure  Dilute Nitrides  n Concentration  Band Gap  
Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes 期刊论文
Physica B: Condensed Matter, 2017, 卷号: 527, 页码: 52-56
Authors:  Dong C(董琛);  Han XX(韩修训);  Li J(李健);  Gao, Xin;  Yoshio Ohshita;  Han XX(韩修训)
Adobe PDF(862Kb)  |  Favorite  |  View/Download：81/1  |  Submit date：2017/12/18
Gaasn  Schottky Barrier Diodes (Sbds)  Growth Orientation  C-v And G/ω-v Characteristics  Interface States