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Effects of selenization conditions on microstructure evolution in solution processed Cu2ZnSn(S,Se)4 solar cells 期刊论文
Solar Energy Materials and Solar Cells, 2019, 卷号: 195, 期号: 12, 页码: 274-279
Authors:  Zhao Y(赵雲);  Han XX(韩修训);  Chang L(常乐);  Dong C(董琛);  Li JS(栗军帅);  Yan XB(阎兴斌)
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Recent advances in understanding Li–CO2 electrochemistry 期刊论文
Energy & Environmental Science, 2019, 卷号: 2019, 期号: 12, 页码: 887-922
Authors:  Bao Liu;  Yinglun Sun;  Lingyang Liu;  Jiangtao Chen;  Bingjun Yang;  Shan Xu;  Xingbin Yan
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3D nitrogen-doped framework carbon for high-performance potassium ion hybrid capacitor 期刊论文
Energy Storage Materials, 2019, 卷号: 2019, 期号: 23, 页码: 522-539
Authors:  Bingjun Yang;  Jiangtao Chen;  Lingyang Liu;  Pengjun Ma;  Bao Liu;  Junwei Lang;  Yu Tang;  Xingbin Yan
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Crossed carbon skeleton enhances the electrochemical performance of porous silicon nanowires for lithium ion battery anode 期刊论文
Electrochimica Acta, 2018, 卷号: 280, 期号: 08, 页码: 86
Authors:  Zhang FF(张芳芳);  Wan L(万柳);  Chen JT(陈江涛);  Li XC(李小成);  Yan XB(阎兴斌)
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Porous Silicon Nanowires Crossed Carbon Skeleton Anode Lithium-ion Batteries Additive  
Formation energies of substitutional N-As and split interstitial complexes in dilute GaAsN alloys with different growth orientations 期刊论文
Applied Physics A-MATERIALS SCIENCE & PROCESSING, 2018, 卷号: 124, 期号: 2, 页码: 108(1-5)
Authors:  Li J(李健);  Han XX(韩修训);  Dong C(董琛);  Fan, Changzeng;  Han XX(韩修训)
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Theoretical investigation of structural, mechanical and electronic properties of GaAs1-xNx alloys under ambient and high pressure 期刊论文
Physica B: Condensed Matter, 2017, 卷号: 526, 页码: 1-6
Authors:  Li J(李健);  Han XX(韩修训);  Dong C(董琛);  Fan, Changzeng;  Han XX(韩修训)
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First-principles Calculations  Gaas1-xnx Alloys  High Pressure  Dilute Nitrides  n Concentration  Band Gap  
Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes 期刊论文
Physica B: Condensed Matter, 2017, 卷号: 527, 页码: 52-56
Authors:  Dong C(董琛);  Han XX(韩修训);  Li J(李健);  Gao, Xin;  Yoshio Ohshita;  Han XX(韩修训)
Adobe PDF(862Kb)  |  Favorite  |  View/Download:81/1  |  Submit date:2017/12/18
Gaasn  Schottky Barrier Diodes (Sbds)  Growth Orientation  C-v And G/ω-v Characteristics  Interface States  
Enhancing Open-Circuit Voltage of Solution-Processed Cu2ZnSn(S,Se)(4) Solar Cells With Ag Substitution 期刊论文
IEEE Journal of Photovoltaics, 2017, 卷号: 7, 期号: 3, 页码: 874-881
Authors:  Zhao Y(赵雲);  Han XX(韩修训);  Xu, Bin;  Li W(李文);  Li J(李健);  Li JJ(李佳佳);  Wang M(王敏);  Dong C(董琛);  Ju P(鞠鹏);  Li, Junshuai
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Ag Substitution  Open-circuit Voltage  Cu2znsn(s  Thin Film Solar Cells  Se)(4) (cztsSe)  
Impact of the substrate orientation on the N incorporation in GaAsN: Theoretical and experimental investigations 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 687, 页码: 42-46
Authors:  Li J(李健);  Han XX(韩修训);  Dong C(董琛);  Fan ZZ(范长增);  Yoshio Ohshita;  Masafumi Yamaguchi;  Han XX(韩修训)
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Gaasn  First Principle Calculation  n Incorporation  Growth Orientation  Chemical Potentials  
Watchband-Like Supercapacitors with Body Temperature Inducible Shape Memory Ability 期刊论文
Advanced Energy Materials, 2016, 卷号: 6, 期号: 16, 页码: 1600763(1-10)
Authors:  Liu LY(刘灵洋);  Shen BS(申保收);  Jiang, Dan;  Guo RS(郭瑞生);  Kong, Lingbin;  Yan XB(阎兴斌);  Yan XB(阎兴斌)
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