Chinese | English

Search in the results

LICP OpenIR

Browse/Search Results:  1-2 of 2 Help

Filters            
Selected(0)Clear Items/Page:    Sort:
Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes 期刊论文
Physica B: Condensed Matter, 2017, 卷号: 527, 页码: 52-56
Authors:  Dong C(董琛);  Han XX(韩修训);  Li J(李健);  Gao, Xin;  Yoshio Ohshita;  Han XX(韩修训)
Adobe PDF(862Kb)  |  Favorite  |  View/Download：81/1  |  Submit date：2017/12/18
Gaasn  Schottky Barrier Diodes (Sbds)  Growth Orientation  C-v And G/ω-v Characteristics  Interface States  
Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 657, 页码: 325-329
Authors:  Dong C(董琛);  Han XX(韩修训);  Gao, Xin;  Yoshio Ohshita;  Masafumi Yamaguchi;  Han XX(韩修训)
Adobe PDF(1243Kb)  |  Favorite  |  View/Download：179/2  |  Submit date：2015/12/30
Gaasn  Schottky Diode  Growth Orientation  I-v Characteristics  C-v Characteristics  Electrical Properties