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中国科学院兰州化学物理研究所机构知识库
KMS Lanzhou Institute of Chemical Physics,Chinese Academy of Sciences
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清洁能源化学与材料... [14]
固体润滑国家重点实验... [5]
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一种银掺杂铜锌锡硫硒光吸收层薄膜材料及其在太阳能电池中的应用
专利
专利类型: 发明, 专利号: 201610950422.4, 申请日期: 2017-12-22, 公开日期: 2017-01-04
Inventors:
韩修训
;
赵雲
;
李文
;
李健
Adobe PDF(569Kb)
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View/Download:119/2
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Submit date:2018/03/21
MoS2低维材料的溶液法制备及其在光电转换中的应用研究
学位论文
, 北京: 中国科学院大学, 2017
Authors:
王敏
Adobe PDF(10002Kb)
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View/Download:404/2
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Submit date:2018/01/09
Mos2
纳米结构
异质结
光催化产氢
Nanostructures
Heterojunction
Photocatalytic Hydrogen Evolution
一种利用溶胶凝胶法制备硫族化合物薄膜的方法
专利
专利类型: 发明, 专利号: 201310605709.X, 申请日期: 2017-01-04, 公开日期: 2015-06-03
Inventors:
韩修训
;
赵雲
;
李文
;
刘亮
Adobe PDF(384Kb)
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View/Download:74/2
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Submit date:2018/03/15
Ag2S nanoparticle-decorated MoS2 for enhanced electrocatalytic and photoelectrocatalytic activity in water splitting
期刊论文
Dalton Transactions, 2017, 卷号: 46, 期号: 2, 页码: 483-490
Authors:
Wang M(王敏)
;
Ju P(鞠鹏)
;
Li W(李文)
;
Zhao Y(赵雲)
;
Han XX(韩修训)
;
Han XX(韩修训)
Adobe PDF(2270Kb)
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Submit date:2017/03/06
Small but strong: The influence of fluorine atoms on formation and performance of graphene quantum dots using a gradient F-sacrifice strategy
期刊论文
Carbon, 2017, 卷号: 112, 页码: 63-71
Authors:
Gong PW(公培伟)
;
Wang JQ(王金清)
;
Hou KM(侯凯明)
;
Yang ZG(杨志刚)
;
Wang ZF(王赵峰)
;
Liu, Zhe
;
Han XX(韩修训)
;
Yang SR(杨生荣)
;
Wang JQ(王金清)
;
Han XX(韩修训)
Adobe PDF(4132Kb)
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Submit date:2017/02/20
Facile preparation of Cu3BiS3 nanorods film through a solution dip-coating process
期刊论文
Journal of Materials Science: Materials in Electronics, 2017, 卷号: 28, 期号: 23, 页码: 17772-17777
Authors:
Li JJ(李佳佳)
;
Han XX(韩修训)
;
Zhao Y(赵雲)
;
Li J(李健)
;
Wang M(王敏)
;
Dong C(董琛)
;
Hao, Zhaomin
;
Han XX(韩修训)
Adobe PDF(1260Kb)
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Submit date:2017/12/19
Structural, electronic and optical properties of famatinite and enargite Cu3SbS4 under pressure: A theoretical investigation
期刊论文
Physica Status Solidi (b)-basic solid state physics, 2017, 卷号: 254, 期号: 5, 页码: 1600608(1-10)
Authors:
Li J(李健)
;
Han XX(韩修训)
;
Li JJ(李佳佳)
;
Zhao Y(赵雲)
;
Fan, Changzeng
;
Han XX(韩修训)
Adobe PDF(2669Kb)
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View/Download:104/1
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Submit date:2017/07/10
Band Gap
Cu3sbs4
First-principles Calculations
High Pressure
Phase Stability
Direct solution coating of pure-phase Cu2SnS3 thin films without sulfurization
期刊论文
Journal of Materials Science: Materials in Electronics, 2017, 卷号: 28, 期号: 4, 页码: 3481-3486
Authors:
Xu, Bin
;
Zhao Y(赵雲)
;
Sun, Aimin
;
Li, Yan
;
Li W(李文)
;
Han XX(韩修训)
;
Han XX(韩修训)
Adobe PDF(1787Kb)
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Submit date:2017/04/07
Theoretical investigation of structural, mechanical and electronic properties of GaAs1-xNx alloys under ambient and high pressure
期刊论文
Physica B: Condensed Matter, 2017, 卷号: 526, 页码: 1-6
Authors:
Li J(李健)
;
Han XX(韩修训)
;
Dong C(董琛)
;
Fan, Changzeng
;
Han XX(韩修训)
Adobe PDF(1495Kb)
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View/Download:94/2
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Submit date:2017/12/18
First-principles Calculations
Gaas1-xnx Alloys
High Pressure
Dilute Nitrides
n Concentration
Band Gap
Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes
期刊论文
Physica B: Condensed Matter, 2017, 卷号: 527, 页码: 52-56
Authors:
Dong C(董琛)
;
Han XX(韩修训)
;
Li J(李健)
;
Gao, Xin
;
Yoshio Ohshita
;
Han XX(韩修训)
Adobe PDF(862Kb)
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View/Download:81/1
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Submit date:2017/12/18
Gaasn
Schottky Barrier Diodes (Sbds)
Growth Orientation
C-v And G/ω-v Characteristics
Interface States