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(n11)取向GaAsN外延材料的Si掺杂行为及肖特基接触特性研究 学位论文
, 北京: 中国科学院大学, 2016
Authors:  董琛
Adobe PDF(4849Kb)  |  Favorite  |  View/Download:141/0  |  Submit date:2016/11/24
Gaasn  生长取向  外延生长  光电特性  Growth Orientation  Epitaxial Growth  Optoelectronic Characteristics  
BiOI/BiVO4 p-n heterojunction with enhanced photocatalytic activity under visible-light irradiation 期刊论文
Journal of Industrial and Engineering Chemistry, 2016, 卷号: 40, 页码: 83-92
Authors:  Xiang, Zhenbo;  Wang, Yi;  Zhang D(张盾);  Ju P(鞠鹏);  Zhang D(张盾)
Adobe PDF(3890Kb)  |  Favorite  |  View/Download:75/0  |  Submit date:2016/10/17
Bioi  Bivo4  Photocatalysis  Antifouling  Visible Light  
Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 657, 页码: 325-329
Authors:  Dong C(董琛);  Han XX(韩修训);  Gao, Xin;  Yoshio Ohshita;  Masafumi Yamaguchi;  Han XX(韩修训)
Adobe PDF(1243Kb)  |  Favorite  |  View/Download:179/2  |  Submit date:2015/12/30
Gaasn  Schottky Diode  Growth Orientation  I-v Characteristics  C-v Characteristics  Electrical Properties