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Impact of the substrate orientation on the N incorporation in GaAsN: Theoretical and experimental investigations 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 687, 页码: 42-46
Authors:  Li J(李健);  Han XX(韩修训);  Dong C(董琛);  Fan ZZ(范长增);  Yoshio Ohshita;  Masafumi Yamaguchi;  Han XX(韩修训)
Adobe PDF(1305Kb)  |  Favorite  |  View/Download:98/1  |  Submit date:2016/10/25
Gaasn  First Principle Calculation  n Incorporation  Growth Orientation  Chemical Potentials  
Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 657, 页码: 325-329
Authors:  Dong C(董琛);  Han XX(韩修训);  Gao, Xin;  Yoshio Ohshita;  Masafumi Yamaguchi;  Han XX(韩修训)
Adobe PDF(1243Kb)  |  Favorite  |  View/Download:179/2  |  Submit date:2015/12/30
Gaasn  Schottky Diode  Growth Orientation  I-v Characteristics  C-v Characteristics  Electrical Properties  
Fabrication and electrochemical properties of porous VN hollow nanofibers 期刊论文
Journal of Alloys and Compounds, 2015, 卷号: 651, 页码: 785-792
Authors:  Zhao, Jingxin;  Liu B(刘宝);  Xu S(许珊);  Yang J(杨娟);  Lu, Yun
Adobe PDF(2239Kb)  |  Favorite  |  View/Download:73/1  |  Submit date:2016/01/25
Vanadium Nitride Hollow Fibers  Electrospinning  Pseudocapacitors