| Resistive switching behaviors and mechanisms of HfS2 film memory devices studied by experiments and density functional theory calculations | |
| Department | 固体润滑国家重点实验室（LSL） |
Naifeng Li1; Yue Wang1; Haifeng Sun2; Junjie Hu1; Maoyuan Zheng1; Sihao Ye1; Qi Wang1; Yingtao Li1; Deyan He1; Jiatai Wang3; Guangan Zhang4 ; Jing Qi1
| |
| The second department | 低维润滑材料研究组 |
| 2020 | |
| Source Publication | Applied Physics Letters
 |
| Volume | 6Issue:16Pages:063503 |
| If | 3.597 |
| Language | 英语 |
| compositor | 第四作者单位 |
| Document Type | 期刊论文 |
| Identifier | http://ir.licp.cn/handle/362003/26877 |
| Collection | 固体润滑国家重点实验室（LSL） |
| Corresponding Author | Jing Qi |
| Affiliation | 1.Key Laboratory of Special Function Materials and Structure Design, Ministry of Education, School of Physical Science and Technology, Lanzhou University 2.Western Theater Army 3.School of Physics and Electronic Information Engineering, Qinghai Normal University 4.State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemicals Physics, Chinese Academy of Sciences |
| Recommended Citation GB/T 7714 | Naifeng Li,Yue Wang,Haifeng Sun,et al. Resistive switching behaviors and mechanisms of HfS2 film memory devices studied by experiments and density functional theory calculations[J]. Applied Physics Letters,2020,6(16):063503. |
| APA | Naifeng Li.,Yue Wang.,Haifeng Sun.,Junjie Hu.,Maoyuan Zheng.,...&Jing Qi.(2020).Resistive switching behaviors and mechanisms of HfS2 film memory devices studied by experiments and density functional theory calculations.Applied Physics Letters,6(16),063503. |
| MLA | Naifeng Li,et al."Resistive switching behaviors and mechanisms of HfS2 film memory devices studied by experiments and density functional theory calculations".Applied Physics Letters 6.16(2020):063503. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 1-Naifeng Li-Applied（1701KB） | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | View Application Full Text | |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment