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Resistive switching behaviors and mechanisms of HfS2 film memory devices studied by experiments and density functional theory calculations 期刊论文
Applied Physics Letters, 2020, 卷号: 6, 期号: 16, 页码: 063503
Authors:  Naifeng Li;  Yue Wang;  Haifeng Sun;  Junjie Hu;  Maoyuan Zheng;  Sihao Ye;  Qi Wang;  Yingtao Li;  Deyan He;  Jiatai Wang;  Guangan Zhang;  Jing Qi
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