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The formation of a dual-layer carbon film on silicon carbide using a combination of carbide-derived carbon process and chemical vapor deposition in a CCl4 – containing atmosphere 期刊论文
Carbon, 2011, 卷号: 49, 页码: 718-736
Authors:  眭剑;  吕晋军
Adobe PDF(1005Kb)  |  Favorite  |  View/Download:198/1  |  Submit date:2012/09/24