| The formation of a dual-layer carbon film on silicon carbide using a combination of carbide-derived carbon process and chemical vapor deposition in a CCl4 – containing atmosphere | |
| Department | 固体润滑国家重点实验室 ; 先进润滑与防护材料研究发展中心 |
眭剑; 吕晋军
| |
| 2011 | |
| Source Publication | Carbon
 |
| ISSN | 0008-6223 |
| Volume | 49Pages:718-736 |
| Subject Area | 材料科学与物理化学 |
| Funding Organization | the Canada Research Chairs Program (CRC) and the National Science and Engineering Research Council (NSERC) |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | 金属基高温润滑材料组 |
| Document Type | 期刊论文 |
| Identifier | http://ir.licp.cn/handle/362003/693 |
| Collection | 固体润滑国家重点实验室（LSL） |
| Corresponding Author | 吕晋军 |
| Recommended Citation GB/T 7714 | 眭剑,吕晋军. The formation of a dual-layer carbon film on silicon carbide using a combination of carbide-derived carbon process and chemical vapor deposition in a CCl4 – containing atmosphere[J]. Carbon,2011,49:718-736. |
| APA | 眭剑,&吕晋军.(2011).The formation of a dual-layer carbon film on silicon carbide using a combination of carbide-derived carbon process and chemical vapor deposition in a CCl4 – containing atmosphere.Carbon,49,718-736. |
| MLA | 眭剑,et al."The formation of a dual-layer carbon film on silicon carbide using a combination of carbide-derived carbon process and chemical vapor deposition in a CCl4 – containing atmosphere".Carbon 49(2011):718-736. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2011718-736.PDF（1005KB） | 开放获取 | License | View Application Full Text | |||
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