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Formation energies of substitutional N-As and split interstitial complexes in dilute GaAsN alloys with different growth orientations 期刊论文
Applied Physics A-MATERIALS SCIENCE & PROCESSING, 2018, 卷号: 124, 期号: 2, 页码: 108(1-5)
Authors:  Li J(李健);  Han XX(韩修训);  Dong C(董琛);  Fan, Changzeng;  Han XX(韩修训)
Adobe PDF(1348Kb)  |  Favorite  |  View/Download：75/0  |  Submit date：2018/06/11
Impact of the substrate orientation on the N incorporation in GaAsN: Theoretical and experimental investigations 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 687, 页码: 42-46
Authors:  Li J(李健);  Han XX(韩修训);  Dong C(董琛);  Fan ZZ(范长增);  Yoshio Ohshita;  Masafumi Yamaguchi;  Han XX(韩修训)
Adobe PDF(1305Kb)  |  Favorite  |  View/Download：98/1  |  Submit date：2016/10/25
Gaasn  First Principle Calculation  n Incorporation  Growth Orientation  Chemical Potentials  
Pre-annealing induced oxide barrier to suppress the overselenization of Mo contact 期刊论文
Journal of Materials Science: Materials in Electronics, 2016, 卷号: 27, 期号: 11, 页码: 11188-11191
Authors:  Li W(李文);  Han XX(韩修训);  Zhao Y(赵雲);  Yang SR(杨生荣);  Han XX(韩修训);  Yang SR(杨生荣)
Adobe PDF(2562Kb)  |  Favorite  |  View/Download：98/1  |  Submit date：2016/10/25
Growth orientation dependence of Si doping in GaAsN 期刊论文
Journal of Applied Physics, 2015, 卷号: 117, 期号: 5, 页码: 055706(1-4)
Authors:  Han XX(韩修训);  Dong C(董琛);  Feng, Qiang;  Ohshita, Yoshio;  Yamaguchi, Masafumi;  Han XX(韩修训)
Adobe PDF(613Kb)  |  Favorite  |  View/Download：105/5  |  Submit date：2015/12/30