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中国科学院兰州化学物理研究所机构知识库
KMS Lanzhou Institute of Chemical Physics，Chinese Academy of Sciences
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Growth orientation dependence of Si doping in GaAsN
期刊论文
Journal of Applied Physics, 2015, 卷号: 117, 期号: 5, 页码: 055706(1-4)
Authors:
Han XX(韩修训)
;
Dong C(董琛)
;
Feng, Qiang
;
Ohshita, Yoshio
;
Yamaguchi, Masafumi
;
Han XX(韩修训)
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Submit date：2015/12/30
