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Growth orientation dependence of Si doping in GaAsN 期刊论文
Journal of Applied Physics, 2015, 卷号: 117, 期号: 5, 页码: 055706(1-4)
Authors:  Han XX(韩修训);  Dong C(董琛);  Feng, Qiang;  Ohshita, Yoshio;  Yamaguchi, Masafumi;  Han XX(韩修训)
Adobe PDF(613Kb)  |  Favorite  |  View/Download：105/5  |  Submit date：2015/12/30
An explanation for laser-induced spallation effect in a-C:H films:Altered phase evolution route caused by hydrogen doping 期刊论文
Journal of Applied Physics, 2011, 卷号: 109, 期号: 13501, 页码: 13501(1-9)
Authors:  Ding Q(丁奇);  Wang LP(王立平);  Hu LT(胡丽天);  Hu TC(胡天昌);  Wang YF(王云峰);  Zhang YN(张耀南)
Adobe PDF(2071Kb)  |  Favorite  |  View/Download：287/6  |  Submit date：2012/12/03