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中国科学院兰州化学物理研究所机构知识库
KMS Lanzhou Institute of Chemical Physics，Chinese Academy of Sciences
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清洁能源化学与材料实... [1]
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光电材料与器件研究组 [1]
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董琛 [1]
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2016 [1]
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(n11)取向GaAsN外延材料的Si掺杂行为及肖特基接触特性研究
学位论文
, 北京: 中国科学院大学, 2016
Authors:
董琛
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Submit date：2016/11/24
Gaasn
生长取向
外延生长
光电特性
Growth Orientation
Epitaxial Growth
Optoelectronic Characteristics
