Molecular dynamical simulations on a-C:H film growth from C and H atomic flux: efect of incident energy

	Molecular dynamical simulations on a-C:H film growth from C and H atomic flux: efect of incident energy
Department	固体润滑国家重点实验室 ; 先进润滑与防护材料研究发展中心
	Quan WL(权伟龙); Li HX(李红轩); Zhao F(赵飞); Ji L(吉利); Du W(杜雯); Zhou HD(周惠娣); Chen JM(陈建敏)
	2010
Source Publication	Chinese Physics Letters
ISSN	0256-307X
Volume	27 Issue:8 Pages:88102(1-4)
Abstract	Molecular dynamical simulation is carried out to investigate the efects of the incident energy on a-C:H flmgrowth from C and H atomic fux. Our simulations show that the flm growth at low incident energy (1 eV) isdominated by the adsorption of H and C atoms. At moderate incident energy (10 and 20 eV), the ionreaction of incident H atoms with H atoms adsorbed at the surface becomes important. At high incident energy(30 and 40 eV), the a-C:H flm growth is a two-step process: one is the adsorption and the shallow implantationof C atoms, and the other is the deep implantation of H atoms.
Subject Area	材料科学与物理化学
Funding Organization	the National Natural Science Foundation of China under Grant Nos 50705093, 50575217;the Science Fund for Creative Research Groups of the National Science Foundation of China under Grant No 50421502;the National Basic Research Program of China under Grant No 2007CB607601
Indexed By	SCI
Language	英语
Funding Project	磨损和表面工程组
Document Type	期刊论文
Identifier	http://ir.licp.cn/handle/362003/972
Collection	固体润滑国家重点实验室（LSL）中国科学院材料磨损与防护重点实验室/先进润滑与防护材料研究发展中心
Corresponding Author	Chen JM(陈建敏)
Recommended Citation GB/T 7714	Quan WL,Li HX,Zhao F,et al. Molecular dynamical simulations on a-C:H film growth from C and H atomic flux: efect of incident energy[J]. Chinese Physics Letters,2010,27(8):88102(1-4).
APA	权伟龙.,李红轩.,赵飞.,吉利.,杜雯.,...&陈建敏.(2010).Molecular dynamical simulations on a-C:H film growth from C and H atomic flux: efect of incident energy.Chinese Physics Letters,27(8),88102(1-4).
MLA	权伟龙,et al."Molecular dynamical simulations on a-C:H film growth from C and H atomic flux: efect of incident energy".Chinese Physics Letters 27.8(2010):88102(1-4).

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