| The effect of applied negative bias voltage on the structure of Ti-doped a-C:H films deposited by FCVA | |
| Department | 固体润滑国家重点实验室 |
Wang P(王鹏) ; Wang X(王霞); Chen YM(陈友明); Zhang GA(张广安); Liu WM(刘维民); Zhang JY(张俊彦)
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| 2007 | |
| Source Publication | Applied Surface Science
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| ISSN | 0169-4332 |
| Volume | 253Pages:3722-3726 |
| Abstract | Ti-doped hydrogenated diamond-like carbon (DLC) films were deposited on Si(1 0 0) substrates by a filtered cathodic vacuum arc (FCVA) method using Ar and CH4 as the feedstock. The composition and microstructure of the films were investigated by Raman spectroscopy, X-ray photoelectron spectroscopy and IR spectroscopy. The internal stress was determined by the radius of curvature technique. The influence of the bias voltage on the microstructure of the as-deposited films was investigated. It was found that the graphite-like bonds was dominated in the Ti-doped DLC film deposited at 0 V bias voltage. When bias voltage was increased to 150 V, more diamond-like bond were produced and the sp3 content in film reached the maximum value, after which it decreased and more graphite-like bonds feature produced with further increase of the negative bias voltage. The compressive internal in the Ti-doped DLC films also exhibited a maximum value at 150 V bias voltage. IR results indicated that C–H bonded intensity reduced, and H atoms bonded with C atoms were substituted for the Ti atoms as the negative bias voltage increasing. All the composition and microstructure change can be explained by considering the plasma conditions and the effect of negative bias voltage applied to the substrate. |
| Keyword | Hydrogenated Amorphous Carbon (A-c:h) Films Applied Bias Voltage Filtered Cathodic Vacuum Arc (Fcva) |
| Subject Area | 材料科学与物理化学 |
| Funding Organization | the National Natural Science Foundation of China (Grant Nos. 50323007;50572108);the Innovative Group Foundation from NSFC (Grant No. 50421502);the “Hundred Talents Program” of the Chinese Academy of Science |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | 空间润滑材料组 ; 纳米润滑研究组 |
| Document Type | 期刊论文 |
| Identifier | http://ir.licp.cn/handle/362003/4103 |
| Collection | 固体润滑国家重点实验室（LSL） |
| Corresponding Author | Liu WM(刘维民); Zhang JY(张俊彦) |
| Recommended Citation GB/T 7714 | Wang P,Wang X,Chen YM,et al. The effect of applied negative bias voltage on the structure of Ti-doped a-C:H films deposited by FCVA[J]. Applied Surface Science,2007,253:3722-3726. |
| APA | 王鹏,王霞,陈友明,张广安,刘维民,&张俊彦.(2007).The effect of applied negative bias voltage on the structure of Ti-doped a-C:H films deposited by FCVA.Applied Surface Science,253,3722-3726. |
| MLA | 王鹏,et al."The effect of applied negative bias voltage on the structure of Ti-doped a-C:H films deposited by FCVA".Applied Surface Science 253(2007):3722-3726. |
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| File Name/Size | DocType | Version | Access | License | ||
| 20073722-3726.pdf（688KB） | 开放获取 | CC BY-NC-SA | View Application Full Text | |||
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