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Effect of N2/CH4 flow ratio on microstructure and composition of hydrogenated carbon nitride films prepared by a dual DC-RF plasma system
Department固体润滑国家重点实验室
Hao JY(郝俊英); Liu WM(刘维民); Xue QJ(薛群基)
2007
Source PublicationJournal of Non-Crystalline Solids
ISSN0022-3093
Volume353Pages:136-142
AbstractHydrogenated carbon nitride (a-CN:H) films were deposited on n-type (100) silicon substrates making use of direct current radio frequency plasma enhanced chemical vapor deposition (DC-RF-PECVD), using a gas mixture of CH4 and N2 as the source gas in range of N2/CH4 flow ratio from 1/3 to 3/1 (sccm). The deposition rate, composition and bonding structure of the a-CN:H films were characterized by means of X-ray photoelectron spectroscopy (XPS) and Fourier-transform infrared spectrometry (FTIR). The mechanical properties of the deposited films were evaluated using nano-indentation test. It was found that the parameter for the DC-RF-PECVD process had significant effects on the growth rate, structure and properties of the deposited films. The deposition rate of the films decreased clearly, while the N/C ratio in the films increased with increasing N2/CH4 flow ratio. CN radicals were remarkably formed in the deposited films at different N2/CH4 flow ratio, and their contents are related to the nitrogen concentrations in the deposited films. Moreover, the hardness and Young’s modulus of the a-CN:H films sharply increased at first with increasing N2/CH4 flow ratio, then dramatically decreased with further increase of the N2/CH4 flow ratio, and the a-CN:H film deposited at 1/1 had the maximum hardness and Young’s modulus. In addition, the structural transformation from sp3-like to sp2-like carbon–nitrogen network in the deposited films also was revealed.
KeywordFilms And Coatings Chemical Vapor Deposition Plasma Deposition Vapor Phase Deposition Hardness Indentation Microindentation Microstructure Ftir Measurements Xps
Subject Area材料科学与物理化学
Funding Organizationthe National Natural Science Foundation of China (Grant Nos. 50405040;50432020);‘973’ program of China (Grant No. 2007CB607601);the Innovative Group Foundation from NSFC (Grant No. 50421502)
Indexed BySCI
Language英语
Funding Project空间润滑材料组 ; 低维材料摩擦学组
Document Type期刊论文
Identifierhttp://ir.licp.cn/handle/362003/4046
Collection固体润滑国家重点实验室(LSL)
Corresponding AuthorHao JY(郝俊英)
Recommended Citation
GB/T 7714
Hao JY,Liu WM,Xue QJ. Effect of N2/CH4 flow ratio on microstructure and composition of hydrogenated carbon nitride films prepared by a dual DC-RF plasma system[J]. Journal of Non-Crystalline Solids,2007,353:136-142.
APA 郝俊英,刘维民,&薛群基.(2007).Effect of N2/CH4 flow ratio on microstructure and composition of hydrogenated carbon nitride films prepared by a dual DC-RF plasma system.Journal of Non-Crystalline Solids,353,136-142.
MLA 郝俊英,et al."Effect of N2/CH4 flow ratio on microstructure and composition of hydrogenated carbon nitride films prepared by a dual DC-RF plasma system".Journal of Non-Crystalline Solids 353(2007):136-142.
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