Boosting interfacial charge migration of TiO2/BiVO4 photoanode by W doping for photoelectrochemical water splitting
DepartmentERC国家工程研究中心
贾玉龙#; 汪忠浩#; Ma Y(马英); Jiali Liu; Wenbing Shi; Yinhe Lin; Hu X(胡勋); Zhang K(张侃)
The second department生物质能源转化
2019
Source PublicationElectrochimica Acta
Volume300Issue:0Pages:138e144
If5.116
compositor第二作者单位
Document Type期刊论文
Identifierhttp://ir.licp.cn/handle/362003/24929
Collection精细石油化工中间体国家工程研究中心(ERC)
Corresponding AuthorMa Y(马英); Zhang K(张侃)
Affiliation1.School of Chemistry and Chemical Engineering, Yangtze Normal University, Chongqing, 408000, China
2.National Engineering Research Center for Fine Petrochemical Intermediates, State Key Laboratory for Oxo Synthesis and Selective Oxidation, Lanzhou, China
3.School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, China
Recommended Citation
GB/T 7714
贾玉龙#,汪忠浩#,Ma Y,et al. Boosting interfacial charge migration of TiO2/BiVO4 photoanode by W doping for photoelectrochemical water splitting[J]. Electrochimica Acta,2019,300(0):138e144.
APA 贾玉龙#.,汪忠浩#.,Ma Y.,Jiali Liu.,Wenbing Shi.,...&Zhang K.(2019).Boosting interfacial charge migration of TiO2/BiVO4 photoanode by W doping for photoelectrochemical water splitting.Electrochimica Acta,300(0),138e144.
MLA 贾玉龙#,et al."Boosting interfacial charge migration of TiO2/BiVO4 photoanode by W doping for photoelectrochemical water splitting".Electrochimica Acta 300.0(2019):138e144.
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