In-situ stress suppression of hydrogenated a-CNx film prepared via Ar gas introduction
Department先进润滑与防护材料研究发展中心
Wang, Qi1; He, Deyan1; Zhang JY(张俊彦)2
The second department固体润滑国家重点实验室
2017
Source PublicationSurface and Interface Analysis
ISSN0142-2421
Volume49Issue:5Pages:370-375
Abstract

Evolution of hydrogenated amorphous carbon nitride films was investigated with an introduction of Ar gas in the deposition. The results showed that compressive stress of the films decreased versus an increase of Ar flow rate. Especially, at an Ar flow rate of 5 sccm the film exhibited lower compressive stress, higher hardness and lower root-mean-square (rms) roughness than the films deposited without Ar gas introduction. Structural analysis showed that the films with higher hardness, low compressive stress and lower rms roughness had relatively high sp2 and nitrogen content. It was attributed to the assistance of Ar plasma, which can cause N atom to enter graphite ring easily and form curved graphite microstructure.

KeywordAmorphous Carbon Carbon Nitride Films Stress Raman
Subject Area材料科学与物理化学
DOI10.1002/sia.6140
Indexed BySCI
If1.132
Language英语
Funding Project纳米润滑研究组
compositor第二作者单位
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.licp.cn/handle/362003/21742
Collection中国科学院材料磨损与防护重点实验室/先进润滑与防护材料研究发展中心
固体润滑国家重点实验室(LSL)
Corresponding AuthorWang, Qi
Affiliation1.Lanzhou Univ, Sch Phys, Lanzhou 730000, Peoples R China
2.Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China
Recommended Citation
GB/T 7714
Wang, Qi,He, Deyan,Zhang JY. In-situ stress suppression of hydrogenated a-CNx film prepared via Ar gas introduction[J]. Surface and Interface Analysis,2017,49(5):370-375.
APA Wang, Qi,He, Deyan,&Zhang JY.(2017).In-situ stress suppression of hydrogenated a-CNx film prepared via Ar gas introduction.Surface and Interface Analysis,49(5),370-375.
MLA Wang, Qi,et al."In-situ stress suppression of hydrogenated a-CNx film prepared via Ar gas introduction".Surface and Interface Analysis 49.5(2017):370-375.
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