Nanotribological properties of precision-controlled regular nanotexture on H-passivated Si surface by current-induced local anodic oxidation | |
Department | 固体润滑国家重点实验室 |
Mo YF(莫宇飞); Zhao WJ(赵文杰); Huang DM(黄德明); Zhao F(赵飞); Bai MW(白明武) | |
2009 | |
Source Publication | Ultramicroscopy |
ISSN | 0304-3991 |
Volume | 109Pages:247-252 |
Abstract | Nano-sized textures resulted from localized electrochemical oxidation by using atomic force microscopy (AFM) were fabricated on H-passivated Si surface. In this paper, the fabrication and nanotribological properties of nanotexture by local anodic oxidation (LAO) on H-passivated Si surface are presented. A special attention is paid to find the relation between the size of oxide nanotexture and operational parameters such as tip-sample pulsed bias voltage, pulsewidth, and relative humidity to fabricate oxide nanotexture. The nanotribological properties were investigated by a colloidal probe. The results indicate that the nanotextures exhibited low adhesion and greatly reduced friction force at nanometer scale. |
Keyword | Nanotexture Local Anodic Oxidation Atomic Force Microscopy Nanotribology |
Subject Area | 材料科学与物理化学 |
Funding Organization | the National Natural Science Foundation of China under Grant no. 50675217;National 973 Program: 2007CB607601 |
Indexed By | SCI |
Language | 英语 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.licp.cn/handle/362003/2152 |
Collection | 固体润滑国家重点实验室(LSL) |
Corresponding Author | Bai MW(白明武) |
Recommended Citation GB/T 7714 | Mo YF,Zhao WJ,Huang DM,et al. Nanotribological properties of precision-controlled regular nanotexture on H-passivated Si surface by current-induced local anodic oxidation[J]. Ultramicroscopy,2009,109:247-252. |
APA | 莫宇飞,赵文杰,黄德明,赵飞,&白明武.(2009).Nanotribological properties of precision-controlled regular nanotexture on H-passivated Si surface by current-induced local anodic oxidation.Ultramicroscopy,109,247-252. |
MLA | 莫宇飞,et al."Nanotribological properties of precision-controlled regular nanotexture on H-passivated Si surface by current-induced local anodic oxidation".Ultramicroscopy 109(2009):247-252. |
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