LICP OpenIR  > 固体润滑国家重点实验室(LSL)
Nanotribological properties of precision-controlled regular nanotexture on H-passivated Si surface by current-induced local anodic oxidation
Department固体润滑国家重点实验室
Mo YF(莫宇飞); Zhao WJ(赵文杰); Huang DM(黄德明); Zhao F(赵飞); Bai MW(白明武)
2009
Source PublicationUltramicroscopy
ISSN0304-3991
Volume109Pages:247-252
AbstractNano-sized textures resulted from localized electrochemical oxidation by using atomic force microscopy (AFM) were fabricated on H-passivated Si surface. In this paper, the fabrication and nanotribological properties of nanotexture by local anodic oxidation (LAO) on H-passivated Si surface are presented. A special attention is paid to find the relation between the size of oxide nanotexture and operational parameters such as tip-sample pulsed bias voltage, pulsewidth, and relative humidity to fabricate oxide nanotexture. The nanotribological properties were investigated by a colloidal probe. The results indicate that the nanotextures exhibited low adhesion and greatly reduced friction force at nanometer scale.
KeywordNanotexture Local Anodic Oxidation Atomic Force Microscopy Nanotribology
Subject Area材料科学与物理化学
Funding Organizationthe National Natural Science Foundation of China under Grant no. 50675217;National 973 Program: 2007CB607601
Indexed BySCI
Language英语
Citation statistics
Cited Times:25[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.licp.cn/handle/362003/2152
Collection固体润滑国家重点实验室(LSL)
Corresponding AuthorBai MW(白明武)
Recommended Citation
GB/T 7714
Mo YF,Zhao WJ,Huang DM,et al. Nanotribological properties of precision-controlled regular nanotexture on H-passivated Si surface by current-induced local anodic oxidation[J]. Ultramicroscopy,2009,109:247-252.
APA 莫宇飞,赵文杰,黄德明,赵飞,&白明武.(2009).Nanotribological properties of precision-controlled regular nanotexture on H-passivated Si surface by current-induced local anodic oxidation.Ultramicroscopy,109,247-252.
MLA 莫宇飞,et al."Nanotribological properties of precision-controlled regular nanotexture on H-passivated Si surface by current-induced local anodic oxidation".Ultramicroscopy 109(2009):247-252.
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