羰基合成与选择氧化国家重点实验室（OSSO）知识库

The conductivity, carrier concentration, and mobility of iodinated graphene oxide (I-GO) are significantly increased about five orders of magnitude compared with pristine graphene oxide (GO). The exceptional electrical properties of I-GO are mainly attribute to I₃⁻ and I₅⁻ implanted into the surface of GO, which lead to a larger Rashba spin-orbit coupling induced by heavy adatoms with active electrons living in p orbitals. The spin direction of I-GO via flipping up is confirmed. The tunneling of an electron between two carbon atoms through the polyiodides p orbitals opens additional channels for hopping in I-GO, which give rise to the superior charge transfer performance. With the help of these properties, a highly active H₂ evolution has been achieved over I-GO/Pt catalyst under visible light irradiation. Thereinto, I-GO not only provides a large area and two-dimensional substrate for the confined growth of uniformly sized Pt quantum dots but also greatly enhances the transfer of photoelectrons from excited EY to the Pt co-catalyst because of its promotion of charge separation, leading to the significant enhancement of photocatalytic hydrogen evolution.