Effect of temperature on growth and ultraviolet photoluminescence of Zn doped AlN nanostructures | |
Department | 固体润滑国家重点实验室 |
Wu ZG(吴志国)1; Zhang, Weibo1; Hu, Hairong1; Zuo, Shiyong1; Wang, Fengyi1; Yan PX(阎鹏勋)1,2; Wang, Jun1,2; Zhuo, Renfu1; Yan, De1; Wu ZG(吴志国) | |
2014 | |
Source Publication | Materials Letters |
ISSN | 0167-577X |
Volume | 136Pages:95-98 |
Abstract | Zn-doped AlN nanostructures were synthesized via a catalyst-free chemical vapor deposition method under different growth temperatures. The surface morphologies and size of nanostructures are significantly affected by the growth temperature. The undoped sample shows an ultraviolet emission band at 360 nm, which is attributed to the transition from defect complex to the ON level. With increasing temperature, the doped samples exhibit two new emissions centered at 282 and 320 nm. The band at 320 nm is related to the nitrogen vacancies, and the band at 282 nm can be ascribed to the transition from nitrogen vacancies with three positive charges to neutral Zn acceptors. These results indicate that temperature increase favors the Zn incorporation which strongly affects the growth and luminescence of samples. |
Keyword | Zn Doped Aln Nanostructures Defects Luminescence |
Subject Area | 材料科学与物理化学 |
DOI | 10.1016/j.matlet.2014.07.180 |
Funding Organization | the National Natural Science Foundation of China (Grant nos. 11004089;11204114);Innovation Funds of China Electronics Technology Group Corporation no. 46 Research Institute (Grant no. CJ20120204);the Fundamental Research Funds for the Central Universities (No. lzujbky-2013-185) |
Indexed By | SCI |
If | 2.489 |
Language | 英语 |
compositor | 第二作者单位 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.licp.cn/handle/362003/20341 |
Collection | 固体润滑国家重点实验室(LSL) |
Corresponding Author | Wu ZG(吴志国) |
Affiliation | 1.Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China 2.Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China |
Recommended Citation GB/T 7714 | Wu ZG,Zhang, Weibo,Hu, Hairong,et al. Effect of temperature on growth and ultraviolet photoluminescence of Zn doped AlN nanostructures[J]. Materials Letters,2014,136:95-98. |
APA | Wu ZG.,Zhang, Weibo.,Hu, Hairong.,Zuo, Shiyong.,Wang, Fengyi.,...&吴志国.(2014).Effect of temperature on growth and ultraviolet photoluminescence of Zn doped AlN nanostructures.Materials Letters,136,95-98. |
MLA | Wu ZG,et al."Effect of temperature on growth and ultraviolet photoluminescence of Zn doped AlN nanostructures".Materials Letters 136(2014):95-98. |
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