| Growth Kinetics of Copper Replacement Deposition on Al and Al-Si from a Deep Eutectic Solvent | |
| Department | 固体润滑国家重点实验室 |
Kang RX(康瑞雪)1,2; Liang J(梁军)1 ; Qiao ZH(乔竹辉)1; Peng ZJ(彭振军)1; Liang J(梁军)
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| 2015 | |
| Source Publication | Journal of The Electrochemical Society
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| ISSN | 0013-4651 |
| Volume | 162Issue:10Pages:D515-D519 |
| Abstract | The galvanic replacement deposition of copper (Cu) layers from a choline chloride-ethylene glycol deep eutectic solvent was carried out on pure Al (99.99%) and Al-5Si alloy (Al-5 wt% Si alloy). The growth kinetics of Cu galvanic replacement were investigated by open circuit potential (OCP) and electrochemical noise (ECN). The microstructure characteristics of Cu layers were studied by scanning electron microscopy (SEM) and energy dispersive X-ray (EDS) analysis. Results showed that the driving force of Cu galvanic replacement deposition on Al-5Si alloy was weaker than that on pure Al substrate, resulting in the lower galvanic replacement rate of Cu on Al-5Si alloy. The Cu layer on Al-5Si alloy was dense and uniform, while was loose and discontinuous on pure Al. The Si as solid solute in Al matrix of Al-5Si alloy was the main reason for obtaining dense and uniform Cu layer on the substrate. |
| Keyword | Al-si Alloy Copper Galvanic Replacement Deep Eutectic Solvent Growth Kinetics Pure Al |
| Subject Area | 材料科学与物理化学 |
| DOI | 10.1149/2.0251510jes |
| Funding Organization | National Natural Science Foundation of China (grant No. 51305432);the "Hundred Talents Program" of Chinese Academy of Sciences (J. Liang) |
| Indexed By | SCI |
| If | 3.266 |
| Language | 英语 |
| Funding Project | 空间润滑材料组 |
| compositor | 第一作者单位 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.licp.cn/handle/362003/18661 |
| Collection | 中国科学院材料磨损与防护重点实验室/先进润滑与防护材料研究发展中心 |
| Corresponding Author | Liang J(梁军) |
| Affiliation | 1.Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100080, Peoples R China |
| Recommended Citation GB/T 7714 | Kang RX,Liang J,Qiao ZH,et al. Growth Kinetics of Copper Replacement Deposition on Al and Al-Si from a Deep Eutectic Solvent[J]. Journal of The Electrochemical Society,2015,162(10):D515-D519. |
| APA | Kang RX,Liang J,Qiao ZH,Peng ZJ,&梁军.(2015).Growth Kinetics of Copper Replacement Deposition on Al and Al-Si from a Deep Eutectic Solvent.Journal of The Electrochemical Society,162(10),D515-D519. |
| MLA | Kang RX,et al."Growth Kinetics of Copper Replacement Deposition on Al and Al-Si from a Deep Eutectic Solvent".Journal of The Electrochemical Society 162.10(2015):D515-D519. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 3.pdf（756KB） | 期刊论文 | 出版稿 | 开放获取 | CC BY-NC-SA | View Application Full Text | |
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